Molecular simulation of the plastic deformation and crack formation in single grit grinding of 4H-SiC single crystal
Silicon carbide (SiC) is a promising semiconductor material for high-performance power
electronics devices, but difficult to machine. The development of cost-effective machining …
electronics devices, but difficult to machine. The development of cost-effective machining …
Assessment and optimization of the fast inertial relaxation engine (fire) for energy minimization in atomistic simulations and its implementation in lammps
J Guénolé, WG Nöhring, A Vaid, F Houllé, Z ** coupling, ion energy and crystal orientation
We present a numerical study on swift ion induced effects in crystalline 3C silicon carbide
(SiC) by the two-temperature model, which considering the electronic stop** and …
(SiC) by the two-temperature model, which considering the electronic stop** and …