We discuss a model for the onsite matrix elements of the sp 3 d 5 s∗ tight-binding
Hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model …

We have investigated the electron mobility in ultrathin-body InGaAs-on-insulator devices
using physics-based modeling that self-consistently accounts for quantum confinement and …

Compact model of flexible radio frequency (RF) electronic devices is crucial for flexible
circuit designs. In this article, a compact model, including external strain effects for flexible …

This paper revisits the problem of the linearized Boltzmann transport equation (BTE), or,
equivalently, of the momentum relaxation time, momentum relaxation time (MRT), for the …

The confined states in strained silicon fully depleted silicon-on-insulator MOSFETs are
investigated using full-band kp method within the envelope-function approximation. Full …

This paper reports a simulation study investigating the drive current of a prototypical SiGe n-
type FinFET built on a relaxed SiGe substrate for different values of the Ge content x in the Si …

This paper presents a self-consistent coupled DD/MSBTE solver for the device simulation of
realistic 3D multi-gate transistors. The MSBTE for quasi-1D k-space is solved in the channel …

First-principles electronic structure methods are used to predict the mobility of n-type carrier
scattering in strained SiGe. We consider the effects of strain on the electron-phonon …

We present a comprehensive investigation of the low-field hole mobility in strained Ge and III-
V (GaAs, GaSb, InSb, and In 1− x Ga x As⁠) p-channel inversion layers with both SiO 2 and …

The hole inversion layer mobility of in-plane uniaxially stressed Si is modeled by a
microscopic approach. For an arbitrary crystallographic surface orientation the two …