[BOOK][B] Characterization of semiconductor heterostructures and nanostructures
G Agostini, C Lamberti - 2011 - books.google.com
In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …
on semiconductor heterostructures have been required to obtain increasingly strict and well …
Metamorphic InAs (Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5 μm mid-
infrared (mid-IR) spectral range are currently of great demand for a wide variety of …
infrared (mid-IR) spectral range are currently of great demand for a wide variety of …
Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells
NJ Ekins-Daukes, JM Barnes, KWJ Barnham… - Solar Energy materials …, 2001 - Elsevier
The state of GaAs/InGaAs quantum well solar cell research is reviewed. The effect of strain
upon the GaAs/InGaAs cells is discussed and the limits to a strained GaAs/InGaAs cell …
upon the GaAs/InGaAs cells is discussed and the limits to a strained GaAs/InGaAs cell …
Unexpected Crystal and Domain Structures and Properties in Compositionally Graded PbZr1‐xTixO3 Thin Films
Synthesis of compositionally graded versions of PbZr (1-x) Ti (x) O3 thin films results in
unprecedented strains (as large as≈ 4.5× 10 (5) m (-1)) and correspondingly unexpected …
unprecedented strains (as large as≈ 4.5× 10 (5) m (-1)) and correspondingly unexpected …
Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells
The relationship between structural and low-temperature transport properties is explored for
InxAl1− xAs/InxGa1− xAs metamorphic quantum wells with x> 0.7 grown on GaAs by …
InxAl1− xAs/InxGa1− xAs metamorphic quantum wells with x> 0.7 grown on GaAs by …
Complex Evolution of Built-in Potential in Compositionally-Graded PbZr1–xTixO3 Thin Films
Epitaxial strain has been widely used to tune crystal and domain structures in ferroelectric
thin films. New avenues of strain engineering based on varying the composition at the …
thin films. New avenues of strain engineering based on varying the composition at the …
Strain-engineered biaxial tensile epitaxial germanium for high-performance Ge/InGaAs tunnel field-effect transistors
The structural, morphological, and energy band alignment properties of biaxial tensile-
strained germanium epilayers, grown in-situ on GaAs via a linearly graded In x Ga 1-x As …
strained germanium epilayers, grown in-situ on GaAs via a linearly graded In x Ga 1-x As …
Strain relaxation properties of InAsyP1− y metamorphic materials grown on InP substrates
The strain relaxation mechanism and defect properties of compositionally step-graded InAs
y P 1− y buffers grown by molecular beam epitaxy on InP have been investigated. InAsP …
y P 1− y buffers grown by molecular beam epitaxy on InP have been investigated. InAsP …
Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space map** and transmission electron …
JM Chauveau, Y Androussi, A Lefebvre… - Journal of applied …, 2003 - pubs.aip.org
We propose a method to determine the indium concentrations x and y in the In y Al 1− y
As/In x Ga 1− x As metamorphic structures. This approach is based on the combination of …
As/In x Ga 1− x As metamorphic structures. This approach is based on the combination of …
Broad Range Tuning of InAs Quantum Dot Emission for Nanophotonic Devices in the Telecommunication Bands
B Scaparra, E Sirotti, A Ajay, B Jonas… - ACS Applied Nano …, 2024 - ACS Publications
InAs semiconductor quantum dots (QDs) emitting in the near-infrared are promising
platforms for on-demand single-photon sources and spin-photon interfaces. However, the …
platforms for on-demand single-photon sources and spin-photon interfaces. However, the …