Junction less field effect transistor, also known as JLFET, is widely regarded as the most
promising candidate that has the potential to replace the more conventional MOSFET used …

Secondary ion mass spectrometry (SIMS) is a technique for chemical analysis and imaging
of solid materials, with applications in many areas of science and technology. It involves …

With the transition from planar to three-dimensional device architectures, devices such as
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …

Abstract Non-planar Fin Field Effect Transistors (FinFET) are already present in modern
devices. The evolution from the well-established 2D planar technology to the design of 3D …

This review provides an overview of the current status of ion-implantation research in silicon,
germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon …

Advanced semiconductor devices offer a metrology challenge due to their small feature size,
diverse composition and intricate structure. Atom probe tomography (APT) is an emerging …

Scan-free grazing-emission X-ray fluorescence spectroscopy (GEXRF) is an established
technique for the investigation of the elemental depth-profiles of various samples. Recently it …

The characterization of nanostructured surfaces with sensitivity in the sub-nm range is of
high importance for the development of current and next-generation integrated electronic …

The precise characterization of the do** profile is crucial for optimizing the performance
and structural integrity of semiconductor devices. As the size of semiconductor devices …

For the first time, we present a Super Steep Retrograde Well (SSRW) FinFET process
utilizing patterned well implants and Si-based epitaxy channels and compare to a state-of …