InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55 µm lasers
B Wang, X Yu, Y Zeng, W Gao, W Chen… - Optical Materials …, 2024 - opg.optica.org
Uniform quantum dots (QDs) with a narrowed linewidth of photoluminescence (PL) are
crucial for develo** high-performance QD lasers. This study focuses on optimizing the …
crucial for develo** high-performance QD lasers. This study focuses on optimizing the …
Switching of the direction of reflectionless light propagation at exceptional points in non-PT-symmetric structures using phase-change materials
We introduce a non-parity-time-symmetric three-layer structure, consisting of a gain medium
layer sandwiched between two phase-change medium layers for switching of the direction of …
layer sandwiched between two phase-change medium layers for switching of the direction of …
Broad Range Tuning of InAs Quantum Dot Emission for Nanophotonic Devices in the Telecommunication Bands
B Scaparra, E Sirotti, A Ajay, B Jonas… - ACS Applied Nano …, 2024 - ACS Publications
InAs semiconductor quantum dots (QDs) emitting in the near-infrared are promising
platforms for on-demand single-photon sources and spin-photon interfaces. However, the …
platforms for on-demand single-photon sources and spin-photon interfaces. However, the …
Plasmonic modulator based on gain-assisted metal–semiconductor–metal waveguide
We investigate plasmonic modulators with gain material to be implemented as ultra-compact
and ultra-fast active nanodevices in photonic integrated circuits. We analyze metal …
and ultra-fast active nanodevices in photonic integrated circuits. We analyze metal …
Thermal analysis of line-defect photonic crystal lasers
We report a systematic study of thermal effects in photonic crystal membrane lasers based
on line-defect cavities. Two material platforms, InGaAsP and InP, are investigated …
on line-defect cavities. Two material platforms, InGaAsP and InP, are investigated …
Epitaxial growth of Quantum Dots on InP for device applications operating in the 1.55 µm wavelength range
The development of epitaxial technology for the fabrication of quantum dot (QD) gain
material operating in the 1.55 μm wavelength range is a key requirement for the evolvement …
material operating in the 1.55 μm wavelength range is a key requirement for the evolvement …
InAs/InGaAsP/InP quantum dot lasers grown by metalorganic chemical vapor deposition
S Luo, HM Ji, F Gao, XG Yang, P Liang… - Chinese Physics …, 2013 - iopscience.iop.org
Abstract We demonstrate InAs/InGaAsP/InP quantum dot (QD) lasers grown by metalorganic
chemical vapor deposition. The active region of the lasers consists of five layers of InAs QDs …
chemical vapor deposition. The active region of the lasers consists of five layers of InAs QDs …
Optical properties of site-selectively grown inas/inp quantum dots with predefined positioning by block copolymer lithography
The InAs/InP quantum dots (QDs) are investigated by time-integrated (PL) and time-resolved
photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet …
photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet …
High resolution STEM of quantum dots and quantum wires
S Kadkhodazadeh - Micron, 2013 - Elsevier
This article reviews the application of high resolution scanning transmission electron
microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs) …
microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs) …