Today, the silicon carbide (SiC) semiconductor is becoming the front runner in advanced
power electronic devices. This material has been considered to be useful for abrasive …

Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power
electronics due to their superior electrical energy efficiencies and improved power densities …

We developed a donor do** technique for β-Ga 2 O 3 by using Si-ion (Si+) implantation.
For the implanted Ga 2 O 3 substrates with Si+= 1× 10 19–5× 10 19 cm-3, a high activation …

Electrically driven single-photon emitting devices have immediate applications in quantum
cryptography, quantum computation and single-photon metrology. Mature device fabrication …

We report first-principles calculations that clarify the formation energies and charge
transition levels of native point defects and carbon clusters in the 4H polytype of silicon …

Threshold voltage instability was investigated for 4H-SiC MOSFETs with phosphorus-doped
(POCl3-annealed) and nitrided (NO-annealed) gate oxides. Threshold voltage shift …

Point defects in silicon carbide (SiC) can act as charge carrier traps and have a pronounced
impact on material properties such as the mobility and carrier lifetime. Prominent among …

Carrier lifetimes in n‐type 4H‐SiC epilayers have been investigated by differential
microwave photoconductance decay measurements. Through a correlation study between …

Interface properties of 4H-SiC (112̅0) and (11̅00) walls, the absence of junction FET
resistance, and the higher metal-oxide-semiconductor (MOS) structures annealed in nitric …

The authors investigated the application of the carbon-implantation/annealing method for
the annealing of the main lifetime limiting defect Z 1∕ 2 in thick 4H–SiC epilayers …