Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Polymer based MEMS and microfluidic devices have the advantages of mechanical
flexibility, lower fabrication cost and faster processing over silicon based ones. Also, many …

Despite their partial ionic nature, many-layered diatomic crystals avoid internal electric
polarization by forming a centrosymmetric lattice at their optimal van der Waals stacking …

Interest in two-dimensional (2D) van der Waals materials has grown rapidly across multiple
scientific and engineering disciplines in recent years. However, ferroelectricity, the presence …

The new edition of the most detailed and comprehensive single-volume reference on major
semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the …

We report that crystalline phases with ferroelectric behavior can be formed in thin films of
SiO 2 doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol.% of …

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each
other, the interfacial charge transfer results in a reversal of the structure's spontaneous …

Numerous candidates attempting to replace Si-based flash memory have failed for a variety
of reasons over the years. Oxide-based resistance memory and the related memristor have …

Ferroelectric switching is unambiguously demonstrated for the first time in a III-V
semiconductor based material: Al 1-x Sc x N—A discovery which could help to satisfy the …

The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …