Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each
other, the interfacial charge transfer results in a reversal of the structure's spontaneous …

Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

Despite their partial ionic nature, many-layered diatomic crystals avoid internal electric
polarization by forming a centrosymmetric lattice at their optimal van der Waals stacking …

Ferroelectricity in atomically thin bilayer structures has been recently predicted and
measured,–in two-dimensional materials with hexagonal non-centrosymmetric unit-cells …

Ferroelectrics have become indispensable components in various application fields,
including information processing, energy harvesting, and electromechanical conversion …

Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because
they are easily integrated with multiple mainstream semiconductor platforms. However, the …

Since the discovery of Rochelle salt a century ago, ferroelectric materials have been
investigated extensively due to their robust responses to electric, mechanical, thermal …

Ferroelectric switching is unambiguously demonstrated for the first time in a III-V
semiconductor based material: Al 1-x Sc x N—A discovery which could help to satisfy the …