Low-dimensional nanostructures for monolithic 3D-integrated flexible and stretchable electronics

Q Hua, G Shen - Chemical Society Reviews, 2024 - pubs.rsc.org
Flexible/stretchable electronics, which are characterized by their ultrathin design, lightweight
structure, and excellent mechanical robustness and conformability, have garnered …

Recent developments in polymer semiconductors with excellent electron transport performances

Y Zhang, W Zhang, Z Chen, L Wang… - Chemical Society Reviews, 2025 - pubs.rsc.org
Benefiting from molecular design and device innovation, electronic devices based on
polymer semiconductors have achieved significant developments and gradual …

Homojunction Interface Boosts Hole-Carrier Injection in p-Type CuI Nanoribbon Field-Effect Transistors

P Sarkar, AV Muhammed Ali, M Gedda… - ACS Applied …, 2024 - ACS Publications
Despite substantial advancements in n-type 1D and 2D nanostructures, achieving p-type
field-effect transistors (FETs) using 1D nanostructures remains a formidable challenge due …

Ultraflexible monolithic three-dimensional static random access memory

J Zhang, W Wang, J Zhu, C Wang, T Zhu, C Zhao… - ACS …, 2024 - ACS Publications
Flexible static random access memory (SRAM) plays an important role in flexible electronics
and systems. However, achieving SRAM with a small footprint, high flexibility, and high …

Low-Power and High-Gain Organic Transistors Achieved Through an Ideal Contact Approaching the Schottky–Mott Limit

J Shi, Y Zhang, W Deng, X Ren, J Qi… - … Applied Materials & …, 2025 - ACS Publications
The advancement of flexible electronics necessitates low-power and high-gain organic
transistors endowed with the capability to amplify feeble signals, meeting the demands of …

[HTML][HTML] High-performance metal oxide TFTs for flexible displays: materials, fabrication, architecture, and applications

SP Jeon, JW Jo, D Nam, YH Kim, SK Park - Soft Science, 2025 - oaepublish.com
Flexible display technology is actively explored as a cornerstone of the next generation of
wearables and soft electronics, set to revolutionize devices with its potential for lightweight …

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

JH Na, JH Park, W Park, J Feng, JS Eun, J Lee, SH Lee… - Nanomaterials, 2024 - mdpi.com
The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital
factors regarding the practical use of electronic devices. In this study, the dependence of …

Flexible Thin-Film Transistor and Integration Strategies for Future Intelligent Displays

Y Zhang, X Wang, S Zhang, C Wang… - IEEE Open Journal on …, 2024 - ieeexplore.ieee.org
Future flexible intelligent displays are driving demands for greater flexibility, higher
resolution, faster refresh rates, and enhanced functionality. This review mainly focuses on …