Conductive oxide interfaces for field effect devices

L Kornblum - Advanced Materials Interfaces, 2019 - Wiley Online Library
The discovery of 2D conductivity at the interface of insulating oxides uncovered a trove of
rich correlated‐electron physics, whose origins are still being debated 15 years later. In …

Band alignment at heteroepitaxial perovskite oxide interfaces. Experiments, methods, and perspectives

A Giampietri, G Drera… - Advanced Materials …, 2017 - Wiley Online Library
Recent advances in the growth of epitaxial oxide thin films have fostered a steady increase
of research on perovskite oxide heterojunctions, which are now produced with …

Origin of charge transfer and enhanced electron–phonon coupling in single unit-cell FeSe films on SrTiO3

H Zhang, D Zhang, X Lu, C Liu, G Zhou, X Ma… - Nature …, 2017 - nature.com
Interface charge transfer and electron–phonon coupling have been suggested to play a
crucial role in the recently discovered high-temperature superconductivity of single unit-cell …

[HTML][HTML] Scavenging of oxygen from SrTiO3 during oxide thin film deposition and the formation of interfacial 2DEGs

AB Posadas, KJ Kormondy, W Guo, P Ponath… - Journal of Applied …, 2017 - pubs.aip.org
SrTiO 3 is a widely used substrate for the growth of other functional oxide thin films. The
reactivity of the substrate with respect to the film during deposition, particularly with regard to …

Recent applications of hard x-ray photoelectron spectroscopy

C Weiland, AK Rumaiz, P Pianetta… - Journal of Vacuum …, 2016 - pubs.aip.org
Recent applications of hard x-ray photoelectron spectroscopy (HAXPES) demonstrate its
many capabilities in addition to several of its limitations. Examples are given, including …

Scalable and highly tunable conductive oxide interfaces

D Cohen-Azarzar, M Baskin, A Lindblad, F Trier… - APL Materials, 2023 - pubs.aip.org
Conducting oxide interfaces have attracted considerable attention, motivated by both
fundamental science and potential for oxide electronic devices. An important gap for …

Electron Mobility in

DV Christensen, Y Frenkel, P Schütz, F Trier… - Physical Review …, 2018 - APS
One of the key issues in engineering oxide interfaces for electronic devices is achieving high
electron mobility. SrTiO 3-based interfaces with high electron mobility have gained a lot of …

The Role of Interface Band Alignment in Epitaxial SrTiO3/GaAs Heterojunctions

S Caspi, M Baskin, SS Shusterman… - ACS Applied …, 2024 - ACS Publications
Correlated oxides are known to have remarkable properties, with a range of electronic,
magnetic, optoelectronic, and photonic functionalities. A key ingredient in realizing these …

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

P Schütz, DV Christensen, V Borisov, F Pfaff… - Physical Review B, 2017 - APS
The spinel/perovskite heterointerface γ-Al 2 O 3/SrTiO 3 hosts a two-dimensional electron
system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart …

Anomalous orbital structure in a spinel–perovskite interface

Y Cao, X Liu, P Shafer, S Middey, D Meyers… - npj Quantum …, 2016 - nature.com
Abstract In all archetypical reported (001)-oriented perovskite heterostructures, it has been
deduced that the preferential occupation of two-dimensional electron gases is in-plane d xy …