We report direct-backscattering Raman studies of GaAs 1− x N x alloys, for x⩽ 0.03, grown
on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like …

The localization of excitons on quantum-dot-like compositional fluctuations has been
observed in temperature-dependent near-field magnetophotoluminescence spectra of …

GaN x As 1− x layers with different nitrogen concentrations x grown on (001) GaAs
substrates by molecular-beam epitaxy have been studied by photoluminescence, optical …

Dopant atoms can be incorporated into nanowires either via the vapor-liquid-solid
mechanism through the catalyst droplet or by the vapor-solid growth on the sidewalls. Si is a …

We report room-temperature Raman studies of strained (100) and (311) B GaAs 1− x Bi x
epitaxial layers for x≤ 0.039. The Raman spectra exhibit a two-mode behavior, as well as …

Vibrational modes introduced by the incorporation of N into GaAs and GaInAs have been
studied by Raman spectroscopy on samples grown by molecular-beam epitaxy using a rf …

Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-
induced level E+ located in the conduction band of GaAs 1− x N x (0.001<~ x<~ 0. 0 2 2) …

We present an atypical multimode behavior in the Raman spectra recorded with Zn 1− x Be
x Se, which belongs to the new class of ternary semiconductor alloys made of materials with …

GaN films have been deposited by radio frequency sputtering of a GaAs target with pure
nitrogen. The growth, composition, and structure of the films deposited on quartz substrates …

The nitrogen distribution in Ga As N∕ Ga As quantum wells (QWs) grown by molecular
beam epitaxy is studied on the atomic scale by cross-sectional scanning tunneling …