AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …

Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …

In order to understand the influence of dislocations on do** and compensation in Al-rich
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …

Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on
AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the …

Photonic materials with tunable and switchable ultraviolet (UV) to high-energy visible (HEV)
optical properties may benefit applications such as sensing, high-density optical memory …

Silicon do** of Al x Ga 1− x N layers with high aluminum mole fractions (0.8< x< 1) was
studied. The AlGaN: Si layers were pseudomorphically grown by metalorganic vapor phase …

The process technologies of AlN growth by physical vapour transport are reviewed in this
paper with a focus on the growth parameters, crucible materials, and the type of …

Free hole concentrations up to∼ 6× 10 17 cm− 3 were measured in Mg-doped AlN
nanowires at room-temperature, which is several orders of magnitude larger than that of …

This chapter provides a brief introduction to group III-nitride ultraviolet light emitting diode
(LED) technologies and an overview of a number of key application areas for UV-LEDs. It …