Structurally different from conventional oxide ferroelectrics with rigid lattices, van der Waals
(vdW) ferroelectrics have stable layered structures with a combination of strong intralayer …

The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

The investigation of two‐dimensional (2D) ferroelectrics has attracted significant interest in
recent years for applications in functional electronics. Without the limitation of a finite size …

It is predicted that the conventional von Neumann computing architecture cannot meet the
demands of future data‐intensive computing applications due to the bottleneck between the …

Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …

In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …

Atomically thin two‐dimensional (2D) oxide crystals have garnered considerable attention
because of their remarkable physical properties and potential for versatile applications. In …

We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a
thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate …

Van der Waals (vdW) thio-and seleno-phosphates have recently gained considerable
attention for the use as “active” dielectrics in two-dimensional/quasi-two-dimensional …