Ionized physical vapor deposition (IPVD): A review of technology and applications

U Helmersson, M Lattemann, J Bohlmark… - Thin solid films, 2006 - Elsevier
In plasma-based deposition processing, the importance of low-energy ion bombardment
during thin film growth can hardly be exaggerated. Ion bombardment is an important …

Microwave discharges at low pressures and peculiarities of the processes in strongly non-uniform plasma

YA Lebedev - Plasma Sources Science and Technology, 2015 - iopscience.iop.org
Microwave discharges (MD) are widely used as a source of non-equilibrium low pressure
plasma for different applications. This paper reviews the methods of microwave plasma …

Principles of plasma discharges and materials processing

MA Lieberman, AJ Lichtenberg - MRS Bulletin, 1994 - cambridge.org
The authors have done an excellent job of clearly explaining the different nomenclature
used in plasma processing, with the meaning of the symbols and constants commonly …

[КНИГА][B] Plasma processes for semiconductor fabrication

WNG Hitchon - 1999 - ui.adsabs.harvard.edu
Plasma processing is a central technique in the fabrication of semiconductor devices. This
self-contained book provides an up-to-date description of plasma etching and deposition in …

Low-temperature plasma processing for Si photovoltaics

SQ **ao, S Xu, K Ostrikov - Materials Science and Engineering: R: Reports, 2014 - Elsevier
There has been a recent rapid expansion of the range of applications of low-temperature
plasma processing in Si-based photovoltaic (PV) technologies. The desire to produce Si …

Investigation of mask selectivities and diamond etching using microwave plasma-assisted etching

DT Tran, C Fansler, TA Grotjohn, DK Reinhard… - Diamond and Related …, 2010 - Elsevier
Diamond etching is characterized using a microwave ECR plasma reactor with regard to
etch rate selectivity, surface morphology, and feature size. Etching is performed on diamond …

Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries: I. GaAs, GaN, GaP, GaSb and AlGaAs

T Maeda, JW Lee, RJ Shul, J Han, J Hong… - Applied surface …, 1999 - Elsevier
BCl3, with addition of N2, Ar or H2, is found to provide smooth anisotropic pattern transfer in
GaAs, GaN, GaP, GaSb and AlGaAs under Inductively Coupled Plasma (ICP) conditions …

A comprehensive study on the electron cyclotron resonance effect in a weakly magnetized capacitively coupled RF plasma: experiment, simulation and modeling

JR Liu, YX Liu, YN Wang - Plasma Sources Science and …, 2023 - iopscience.iop.org
The electron cyclotron resonance (ECR) effect in a weakly magnetized capacitively coupled
radio frequency (RF) plasma was previously observed with optical emission spectroscopy …

Langmuir probe diagnostics of microwave electron cyclotron resonance (ECR) plasma

SB Singh, N Chand, DS Patil - Vacuum, 2008 - Elsevier
A Langmuir probe diagnostics is done on the microwave ECR generated plasma in a 2.45
GHz, 1.5 kW facility set up in our laboratory (for thin film deposition) by inserting a probe in …

Electron cyclotron resonance in a weakly magnetized radio-frequency inductive discharge

CW Chung, SS Kim, HY Chang - Physical review letters, 2002 - APS
The evolution of the electron energy distribution function (EEDF) over a weak magnetic field
range is investigated in magnetized radio-frequency (rf) inductive discharges under a …