[PDF][PDF] Advanced MOSFET Technologies for Next Generation Communication Systems-Perspective and Challenges: A Review.

H Sood, VM Srivastava, G Singh - Journal of Engineering Science & …, 2018 - academia.edu
In this review, authors have retrospect the state-of-art dimension scaling and emerging other
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …

Floating incremental/decremental flux-controlled memristor emulator circuit based on single VDTA

PB Petrović - Analog integrated circuits and signal processing, 2018 - Springer
In this paper, new analog emulator circuits of flux-controlled memristor based on current
voltage differencing transconductance amplifier (VDTA) and passive elements are …

Numerical modeling of subthreshold region of junctionless double surrounding gate MOSFET (JLDSG)

S Rewari, S Haldar, V Nath, SS Deswal… - Superlattices and …, 2016 - Elsevier
Abstract In this paper, Numerical Model for Electric Potential, Subthreshold Current and
Subthreshold Swing for Junctionless Double Surrounding Gate (JLDSG) MOSFEThas been …

Device Modeling of Organic Photovoltaic Cells with Traditional and Inverted Cells Using s-SWCNT:C60 as Active Layer

VM Moorthy, VM Srivastava - Nanomaterials, 2022 - mdpi.com
This research work presents a thorough analysis of Traditional Organic Solar Cell (TOSC)
and novel designed Inverted OSC (IOSC) using Bulk Hetero-Junction (BHJ) structure …

Self-consistent analysis for optimization of AlGaAs/GaAs based Heterostructure

P Paramasivam, N Gowthaman… - Journal of Electrical …, 2024 - Springer
The heterostructures are suitable for develo** high-performance electronic and
optoelectronic devices. In this work, a significant interest in the design and analysis of …

Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications

P Paramasivam, N Gowthaman, VM Srivastava - Nanomaterials, 2023 - mdpi.com
This research work uses sp3d5s* tight-binding models to design and analyze the structural
properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide …

Capacitive modeling of cylindrical surrounding double-gate MOSFETs for hybrid RF applications

N Gowthaman, VM Srivastava - IEEE Access, 2021 - ieeexplore.ieee.org
The advancements in semiconductor technology greatly impact the growth of hybrid VLSI
devices and components. The nanometer technology has been possibly executed due to the …

Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications

S Rewari, V Nath, S Haldar, SS Deswal… - Microsystem …, 2019 - Springer
Abstract In this paper Hafnium Oxide (HfO 2) based cylindrical Junctionless Double
Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device …

Mathematical modeling of electron density arrangement in CSDG MOSFET: A nano-material approach

N Gowthaman, VM Srivastava - Journal of Materials Science, 2022 - Springer
The CMOS technology with MOSFETs below 70 nm node for Semiconductor Industry
Association roadmap has outstanding resistance to short-channel effect and improves the …

Realization with fabrication of double-gate MOSFET based differential amplifier

JE Pakaree, VM Srivastava - Microelectronics Journal, 2019 - Elsevier
This research work designed a differential amplifier with Double-Gate (DG) MOSFET which
can be used in electronic devices at Micro-and Nano-technology level. The DG MOSFET …