[PDF][PDF] Advanced MOSFET Technologies for Next Generation Communication Systems-Perspective and Challenges: A Review.
H Sood, VM Srivastava, G Singh - Journal of Engineering Science & …, 2018 - academia.edu
In this review, authors have retrospect the state-of-art dimension scaling and emerging other
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …
Floating incremental/decremental flux-controlled memristor emulator circuit based on single VDTA
PB Petrović - Analog integrated circuits and signal processing, 2018 - Springer
In this paper, new analog emulator circuits of flux-controlled memristor based on current
voltage differencing transconductance amplifier (VDTA) and passive elements are …
voltage differencing transconductance amplifier (VDTA) and passive elements are …
Numerical modeling of subthreshold region of junctionless double surrounding gate MOSFET (JLDSG)
Abstract In this paper, Numerical Model for Electric Potential, Subthreshold Current and
Subthreshold Swing for Junctionless Double Surrounding Gate (JLDSG) MOSFEThas been …
Subthreshold Swing for Junctionless Double Surrounding Gate (JLDSG) MOSFEThas been …
Device Modeling of Organic Photovoltaic Cells with Traditional and Inverted Cells Using s-SWCNT:C60 as Active Layer
VM Moorthy, VM Srivastava - Nanomaterials, 2022 - mdpi.com
This research work presents a thorough analysis of Traditional Organic Solar Cell (TOSC)
and novel designed Inverted OSC (IOSC) using Bulk Hetero-Junction (BHJ) structure …
and novel designed Inverted OSC (IOSC) using Bulk Hetero-Junction (BHJ) structure …
Self-consistent analysis for optimization of AlGaAs/GaAs based Heterostructure
P Paramasivam, N Gowthaman… - Journal of Electrical …, 2024 - Springer
The heterostructures are suitable for develo** high-performance electronic and
optoelectronic devices. In this work, a significant interest in the design and analysis of …
optoelectronic devices. In this work, a significant interest in the design and analysis of …
Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications
P Paramasivam, N Gowthaman, VM Srivastava - Nanomaterials, 2023 - mdpi.com
This research work uses sp3d5s* tight-binding models to design and analyze the structural
properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide …
properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide …
Capacitive modeling of cylindrical surrounding double-gate MOSFETs for hybrid RF applications
N Gowthaman, VM Srivastava - IEEE Access, 2021 - ieeexplore.ieee.org
The advancements in semiconductor technology greatly impact the growth of hybrid VLSI
devices and components. The nanometer technology has been possibly executed due to the …
devices and components. The nanometer technology has been possibly executed due to the …
Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications
Abstract In this paper Hafnium Oxide (HfO 2) based cylindrical Junctionless Double
Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device …
Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device …
Mathematical modeling of electron density arrangement in CSDG MOSFET: A nano-material approach
N Gowthaman, VM Srivastava - Journal of Materials Science, 2022 - Springer
The CMOS technology with MOSFETs below 70 nm node for Semiconductor Industry
Association roadmap has outstanding resistance to short-channel effect and improves the …
Association roadmap has outstanding resistance to short-channel effect and improves the …
Realization with fabrication of double-gate MOSFET based differential amplifier
JE Pakaree, VM Srivastava - Microelectronics Journal, 2019 - Elsevier
This research work designed a differential amplifier with Double-Gate (DG) MOSFET which
can be used in electronic devices at Micro-and Nano-technology level. The DG MOSFET …
can be used in electronic devices at Micro-and Nano-technology level. The DG MOSFET …