The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

Rare-earth doped materials are of crucial importance to optoelectronics, and are widely
deployed in fibre amplifiers and solid-state lasers. This article summarises the present state …

Erbium doped materials are of great interest in thin film integrated optoelectronic technology,
due to their Er 3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er …

Silicon photonics could enable a chip-scale platform for monolithic integration of optics and
microelectronics for applications of optical interconnects in which high data streams are …

The overlap of the principal luminescence band of the erbium ion with the low-loss optical
transmission window of silica optical fibres, along with the drive for integration of photonics …

The detection of electron spins associated with single defects in solids is a critical operation
for a range of quantum information and measurement applications under development …

We report the first room‐temperature sharp line electroluminescence of an erbium‐doped
silicon light‐emitting diode at λ= 1.54 μm. The electroluminescence originates from an …

We have obtained room‐temperature electroluminescence (EL) at∼ 1.54 μm from Er and O
co‐doped crystalline p‐n Si diodes fabricated by ion implantation, under both forward and …

Ion implantation offers one of the best examples of a topic that starting from the basic
research level has reached the high technology level within the framework of …

A detailed investigation on the excitation and deexcitation processes of Er 3+ in Si is
reported. In particular, we explored Er pum** through electron-hole pair recombination …