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A journey towards reliability improvement of TiO2 based resistive random access memory: a review
Abstract A Resistive Random Access Memory (RRAM), where the memory performance
principally originated from 'resistive'change rather than 'capacitive'one (the case with …
principally originated from 'resistive'change rather than 'capacitive'one (the case with …
[HTML][HTML] Ion-driven electrochemical random-access memory-based synaptic devices for neuromorphic computing systems: a mini-review
To enhance the computing efficiency in a neuromorphic architecture, it is important to
develop suitable memory devices that can emulate the role of biological synapses. More …
develop suitable memory devices that can emulate the role of biological synapses. More …
Arbitrary spike time dependent plasticity (STDP) in memristor by analog waveform engineering
In the literature, various pulse-based programming schemes have been used to mimic
typical spike time-dependent plasticity (STDP)-based learning rule observed in biological …
typical spike time-dependent plasticity (STDP)-based learning rule observed in biological …
Self-limited CBRAM with threshold selector for 1S1R crossbar array applications
In this letter, we demonstrate a self-limited conductive-bridging random access memory
(CBRAM) that removes the necessity for external current compliance in a one selector-one …
(CBRAM) that removes the necessity for external current compliance in a one selector-one …
Growth of amorphous, anatase and rutile phase TiO2 thin films on Pt/TiO2/SiO2/Si (SSTOP) substrate for resistive random access memory (ReRAM) device application
Memory structures play a basic role in providing integrated circuits of powerful processing
capabilities. Even most powerful processors have nothing to offer without an accompanying …
capabilities. Even most powerful processors have nothing to offer without an accompanying …
Self-Heating During submicrosecond Current Transients in Pr0.7Ca0.3MnO3-Based RRAM
In filamentary RRAM, the role of self-heating in set/reset (by ion transport) is well
established. However, in nonfilamentary Pr 0.7 Ca 0.3 MnO 3 (PCMO) RRAM, self-heating …
established. However, in nonfilamentary Pr 0.7 Ca 0.3 MnO 3 (PCMO) RRAM, self-heating …
Reaction-Drift Model for Switching Transients in Pr₀. ₇Ca₀. ₃MnO₃-Based Resistive RAM
Pr0. 7Ca0. 3MnO3 (PCMO)-based resistive RAM (RRAM) shows promising memory
properties like nonvolatility, low variability, multiple resistance states, and scalability. From a …
properties like nonvolatility, low variability, multiple resistance states, and scalability. From a …
Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy
We report on the fabrication of memory devices based on a nanoporous GeSbTe layer
electrodeposited inbetween TiN and Ag electrodes. It is shown that devices can operate …
electrodeposited inbetween TiN and Ag electrodes. It is shown that devices can operate …
Forming-free, bi-directional polarity conductive-bridge memory devices with Ge2Sb2Te5 solid-state electrolyte and Ag active electrode
YH Huang, HA Chen, HH Wu, TE Hsieh - Journal of Applied Physics, 2015 - pubs.aip.org
Preparation and characteristics of conductive-bridge random access memory devices
containing Ge 2 Sb 2 Te 5 (GST) chalcogenide as the solid-state electrolyte, Ag as the active …
containing Ge 2 Sb 2 Te 5 (GST) chalcogenide as the solid-state electrolyte, Ag as the active …
Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations
The nitrogen-doped Ge 2 Sb 2 Te 5 (GST) programmable metallization cell is investigated to
address the low switching voltage and need for a high resistance ratio, which are critical …
address the low switching voltage and need for a high resistance ratio, which are critical …