GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

The properties of steps in thermal equilibrium are described in the context of prediction of
the stability and evolution of nanostructures on surfaces. Experimental techniques for …

A comparative study of the morphological surface evolution of c-plane (0001) α-Al2O3 upon
annealing was investigated for non-miscut (ie substrates with 0° nominal miscut) and vicinal …

Controlled‐geometry cavities were introduced into the m {100} plane of undoped sapphire
substrates using photolithographic methods, and subsequently internalized by diffusion …

The changes in interface structure and chemical composition of a 99.995% pure nickel/yttria-
stabilised zirconia (YSZ) interface were examined after heat treatment at 1000° C in 97 …

Faceting is a form of self-assembly at the nanometre-scale on adsorbate-covered single-
crystal surfaces, occurring when an initially planar surface converts to a “hill and valley” …

The rate at which a facetted tetragonal cavity of nonequilibrium shape approaches a cubic
equilibrium (Wulff) shape via surface diffusion was modeled. The shape relaxation rate of a …

The etching of sapphire substrates using and a 3: 1 mixture, as a function of temperature
and etching time, was systematically studied using atomic force microscopy. The sapphire …

The constant improvement of hydrotreating (HDT) catalysts, driven by industrial and
environmental needs, requires a better understanding of the interactions between the oxide …