Arrays of two‐dimensional Islands formed by submonolayer insertions: growth, properties, devices
Ultrathin insertions of a narrow band‐gap material in wide band‐gap matrices represent a
challenging medium in view of aspects of growth phenomena, unique optical properties, and …
challenging medium in view of aspects of growth phenomena, unique optical properties, and …
Character of the Cd distribution in ultrathin CdSe layers in a ZnSe matrix
The character of Cd distribution and the morphology of CdSe layers with nominal
thicknesses between 0.7 and 3.6 ML in a ZnSe matrix were studied by conventional …
thicknesses between 0.7 and 3.6 ML in a ZnSe matrix were studied by conventional …
Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots
IL Krestnikov, M Strassburg, M Caesar, A Hoffmann… - Physical Review B, 1999 - APS
Structural and optical properties of submonolayer CdSe/ZnSe superlattices grown with
varying thickness of the ZnSe spacer layer are studied. High-resolution electron microscopy …
varying thickness of the ZnSe spacer layer are studied. High-resolution electron microscopy …
Metallic materials deposition: metal‐organic precursors
CH Winter, TJ Knisley, LC Kalutarage… - … of Inorganic and …, 2011 - Wiley Online Library
This review describes metal‐organic precursors for the growth of metal‐containing thin films
by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors …
by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors …
Structural and optical evidence of island correlation in CdTe/ZnTe superlattices
The properties of superlattices consisting of 2 monolayer wide CdTe insertions into ZnTe
spacer barriers with thickness ranging from 3 to 75 monolayers are investigated by means of …
spacer barriers with thickness ranging from 3 to 75 monolayers are investigated by means of …
Selenium-related luminescent centers in metalorganic chemical-vapor-phase deposition grown ZnSe epilayers on GaAs
XB Zhang, KL Ha, SK Hark - Applied Physics Letters, 2001 - pubs.aip.org
ZnSe epilayers were grown on a (001) GaAs substrate by metalorganic chemical-vapor-
phase deposition. An interruption of the Zn source (ie, Se passivation) was purposely …
phase deposition. An interruption of the Zn source (ie, Se passivation) was purposely …
Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures
Quantum dot laser structures grown using III–V semiconductors have proved their potential
for improved laser characteristics like low lasing threshold current density, high …
for improved laser characteristics like low lasing threshold current density, high …
Self-assembly in semiconductor epitaxy: from growth mechanisms to device applications
A Bhattacharya, B Bansal - Handbook of Crystal Growth, 2015 - Elsevier
A key feature of epitaxial semiconductor crystal growth is the possibility of realizing different
surface morphological features when growing one material on another. This is driven by …
surface morphological features when growing one material on another. This is driven by …
Interplay of surface charges and excitons localized in CdSe/ZnSe quantum dots
V Türck, S Rodt, R Heitz, O Stier, M Straßburg… - Physica E: Low …, 2002 - Elsevier
Spectral diffusion is an effect often observed in epitaxially grown II–VI quantum dots. It is
shown that in such structures spectral diffusion is caused by electric fields generated from …
shown that in such structures spectral diffusion is caused by electric fields generated from …
Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices
M Strassburg, R Heitz, V Türck, S Rodt… - Journal of electronic …, 1999 - Springer
We report on structural and optical investigations of submonolayer-CdSe/ZnSe superlattices
with varying thicknesses of the ZnSe spacer layers. High-resolution electron microscopy …
with varying thicknesses of the ZnSe spacer layers. High-resolution electron microscopy …