[HTML][HTML] Surface passivation approaches for silicon, germanium, and III–V semiconductors

RJ Theeuwes, WMM Kessels, B Macco - Journal of Vacuum Science & …, 2024 - pubs.aip.org
Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …

Hydrogen Stability and Bonding in SiNx and Al2O3 Dielectric Stacks on Poly-Si/SiOx Passivating Contacts

MB Hartenstein, W Nemeth, DL Young… - ACS Applied Energy …, 2023 - ACS Publications
Polycrystalline Si on SiO x passivating contacts enables some of the highest efficiency
single-junction Si photovoltaic devices, but the high-temperature firing process needed for …

Poly‐SiOx Passivating Contacts with Plasma‐Assisted N2O Oxidation of Silicon (PANO‐SiOx)

Z Yao, G Yang, C Han, PP Moya, E Özkol, J Yan… - Solar …, 2023 - Wiley Online Library
Passivating contacts are crucial for realizing high‐performance crystalline silicon solar cells.
Herein, contact formation by plasma‐enhanced chemical vapor deposition (PECVD) …

Effective hydrogenation of poly-Si passivating contacts by atomic-layer-deposited nickel oxide

N Phung, C van Helvoirt, W Beyer… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
In recent years, passivating contacts based on SiO 2/poly-Si have proven to be an enabling
technology for Si solar cells. Effective hydrogenation of the interfacial SiO 2 is vital for …

[HTML][HTML] Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition

HN Abbasi, X Qi, J Gong, Z Ju, S Min… - Journal of Applied …, 2023 - pubs.aip.org
This work reports a study of the passivation effects of different dielectric thin films deposited
on monocrystalline CdTe/MgCdTe double heterostructures (DHs) using atomic layer …

[HTML][HTML] Atomic layer deposition of ultrathin nitride films for enhanced carrier lifetimes and photoluminescence in CdTe/MgCdTe double heterostructures

HN Abbasi, X Qi, Z Ju, Z Ma, YH Zhang - Journal of Applied Physics, 2024 - pubs.aip.org
This work evaluates the passivation effectiveness of ultrathin nitride layers (SiN x, AlN, and
TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for …

Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films

M Devi, S Tomer, P Pathi - Physica Scripta, 2024 - iopscience.iop.org
We investigate the silicon surface passivation property of Plasma Atomic Layer Deposited
(PALD) hafnium oxide thin films and study its dependence on silicon (Si) do** type, film …

Hydrogenation of p+ poly-Si by Al2O3 nanolayers prepared by atomic layer deposition

RJ Theeuwes, J Melskens, W Beyer, U Breuer… - Journal of Applied …, 2023 - pubs.aip.org
Polysilicon (poly-Si) passivating contacts have enabled some of the highest lab-scale
crystalline silicon (c-Si) solar cell conversion efficiencies, largely due to their excellent …

Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures

HN Abbasi, X Qi, Z Ju, Z Ma, YH Zhang - arxiv preprint arxiv:2408.10696, 2024 - arxiv.org
This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, TiN)
deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar …

Project “BUSSARD”− a holistic development of high-efficiency solar cells covering innovative front-end, metallization and interconnection approaches

A Lorenz, J Schube, V Nikitina, S Mack… - EPJ …, 2025 - epjpv.epj.org
Within this work, we present key results of the transnational European research project
“Bussard”. The aim of this project is the development and evaluation of various innovative …