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The exchange interaction between neighboring quantum dots: physics and applications in quantum information processing
Z Zhou, Y Li, Z Wu, X Ma, S Fan… - Journal of …, 2024 - iopscience.iop.org
Electron spins confined in semiconductor quantum dots (QDs) are one of potential
candidates for physical implementation of scalable quantum information processing …
candidates for physical implementation of scalable quantum information processing …
Nitrogen in silicon for room temperature single-electron tunneling devices
Single-electron transistor (SET) has an advanced feature that can be exploited in quantum
devices. For practical utilization of such devices, the room-temperature operation is highly …
devices. For practical utilization of such devices, the room-temperature operation is highly …
One-dimensional quantum dot array integrated with charge sensors in an InAs nanowire
We report an experimental study of a 1D quintuple-quantum-dot array integrated with two
charge sensors in an InAs nanowire. The device is studied by measuring double quantum …
charge sensors in an InAs nanowire. The device is studied by measuring double quantum …
Variable-barrier quantum coulomb blockade effect in nanoscale transistors
Current–voltage characteristics of a quantum dot in double-barrier configuration, as formed
in the nanoscale channel of silicon transistors, were analyzed both experimentally and …
in the nanoscale channel of silicon transistors, were analyzed both experimentally and …
Charge States, Triple Points, and Quadruple Points in an InAs Nanowire Triple Quantum Dot Revealed by an Integrated Charge Sensor
W Li, Z Liu, J Mu, Y Luo, D Pan… - Advanced Quantum …, 2023 - Wiley Online Library
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is
realized from an InAs nanowire via a fine finger‐gate technique. The complex charge states …
realized from an InAs nanowire via a fine finger‐gate technique. The complex charge states …
Coulomb blockade and Coulomb staircases in CoBi nanoislands on SrTiO3 (001)
Y **a, D Cai, J Gao, P Li, K **e, Y Liu, Y Gu… - …, 2024 - iopscience.iop.org
We successfully fabricated two-dimensional metallic CoBi nanoislands on SrTiO 3 (001)
substrate by molecular beam epitaxy, and systematically investigated their electronic …
substrate by molecular beam epitaxy, and systematically investigated their electronic …
Development of a charge sensor in III-V semiconductor nanowires for scanning tunneling microscopy
FM Jekat, T Schäpers - 2024 - publications.rwth-aachen.de
In dieser Arbeit werden die zentralen Errungenschaften vorgestellt, die für die Realisierung
eines Einzelelektronen-Rastertunnelmikroskops (SE-STM) erforderlich sind. Ein SE-STM …
eines Einzelelektronen-Rastertunnelmikroskops (SE-STM) erforderlich sind. Ein SE-STM …
[PDF][PDF] Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors. Nanomaterials 2022, 12, 4437
Current–voltage characteristics of a quantum dot in double-barrier configuration, as formed
in the nanoscale channel of silicon transistors, were analyzed both experimentally and …
in the nanoscale channel of silicon transistors, were analyzed both experimentally and …