Breaking the do** limit in silicon by deep impurities
n-type do** in Si by shallow impurities, such as P, As, and Sb, exhibits an intrinsic limit
due to the Fermi-level pinning via defect complexes at high do** concentrations. Here, we …
due to the Fermi-level pinning via defect complexes at high do** concentrations. Here, we …
Individual atomic imaging of multiple dopant sites in As-doped Si using spectro-photoelectron holography
K Tsutsui, T Matsushita, K Natori, T Muro… - Nano Letters, 2017 - ACS Publications
The atomic scale characterization of dopant atoms in semiconductor devices to establish
correlations with the electrical activation of these atoms is essential to the advancement of …
correlations with the electrical activation of these atoms is essential to the advancement of …
Silicon nanowire tunneling field-effect transistor arrays: Improving subthreshold performance using excimer laser annealing
We have experimentally established that the inverse subthreshold slope S of a Si nanowire
tunneling field-effect transistor (NW-TFET) array can be within 9% of the theoretical limit …
tunneling field-effect transistor (NW-TFET) array can be within 9% of the theoretical limit …
[HTML][HTML] Tunable magneto-transport properties in ultra-high Bi-doped Si prepared by liquid phase epitaxy
During the past decades, excavating the novel functional materials towards CMOS-
compatible spin-transport devices has been treated as one of the most urgent tasks to …
compatible spin-transport devices has been treated as one of the most urgent tasks to …
Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography
K Tsutsui, Y Morikawa - Japanese Journal of Applied Physics, 2020 - iopscience.iop.org
Electrical activation of dopants in semiconductors with high concentration is a significant
requirement in device technology. However, the maximum concentration is actually limited …
requirement in device technology. However, the maximum concentration is actually limited …
Study of annealing-induced interdiffusion in In2O3/Ag/In2O3 structures by a combined X-ray reflectivity and grazing incidence X-ray fluorescence analysis
B Caby, F Brigidi, D Ingerle, E Nolot, G Pepponi… - … Acta Part B: Atomic …, 2015 - Elsevier
The combination of X-ray reflectivity and grazing incidence X-ray fluorescence has been
applied to the characterization of an In 2 O 3/Ag/In 2 O 3 stack for advanced photovoltaic …
applied to the characterization of an In 2 O 3/Ag/In 2 O 3 stack for advanced photovoltaic …
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
The use of nonequilibrium annealing approaches can produce very high levels of arsenic
electrical activation in Si. However, subsequent thermal treatments between 500 and 800 C …
electrical activation in Si. However, subsequent thermal treatments between 500 and 800 C …
Use of p-and n-type vapor phase do** and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
ND Nguyen, E Rosseel, S Takeuchi, JL Everaert… - Thin Solid Films, 2010 - Elsevier
We evaluated the combination of vapor phase do** and sub-melt laser anneal as a novel
do** strategy for the fabrication of source and drain extension junctions in sub-32nm …
do** strategy for the fabrication of source and drain extension junctions in sub-32nm …
X‐Ray Absorption and RIXS on Coordination Complexes
Coordination complexes of first‐row transition metals participate in a wide range of
processes, for example, spin transitions and electron transfer, and can in many cases act as …
processes, for example, spin transitions and electron transfer, and can in many cases act as …
Phonons in SiAs: Raman scattering study and DFT calculations
J Kutzner, J Kortus, O Pätzold… - Journal of Raman …, 2011 - Wiley Online Library
We present experimental Raman scattering results on single‐crystal silicon monoarsenide
(SiAs). Based on a comparison between Raman measurements and first‐principles density …
(SiAs). Based on a comparison between Raman measurements and first‐principles density …