A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan… - IEEE Journal of the …, 2016 - ieeexplore.ieee.org
The reduction of the supply voltage is standard MOSFETs is impeded by the subthreshold
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
A review of tunnel field-effect transistors for improved ON-state behaviour
KRN Karthik, CK Pandey - Silicon, 2023 - Springer
Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can
possibly replace the traditional MOSFET from current IC technology. It has gained much …
possibly replace the traditional MOSFET from current IC technology. It has gained much …
Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches
Design of U-shape channel tunnel FETs with SiGe source regions
W Wang, PF Wang, CM Zhang, X Lin… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
In this brief, a novel U-shape-channel tunneling field-effect transistor (UTFET) with a SiGe
source region is investigated by 2-D technology computer aided design simulation. The …
source region is investigated by 2-D technology computer aided design simulation. The …
A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance
RM Imenabadi, M Saremi… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
To suppress the ambipolar behavior and improve RF performance in tunnel field-effect
transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more …
transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more …
Highly sensitive N+ pocket doped vertical tunnel FET biosensor with wide range work function modulation gate electrodes
G Wadhwa, J Singh, A Thakur, S Bhandari - Materials Science and …, 2023 - Elsevier
This manuscript addresses the first time implementing binary metal alloy's wide range work
function gate electrodes along with N+ Si0. 55Ge0. 45 pocket in charge plasma dielectric …
function gate electrodes along with N+ Si0. 55Ge0. 45 pocket in charge plasma dielectric …
Study of random dopant fluctuation effects in germanium-source tunnel FETs
N Damrongplasit, C Shin, SH Kim… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
The effects of random dopant fluctuations (RDFs) on the performance of Germanium-source
tunnel field-effect transistors (TFETs) is studied using 3-D device simulation. The RDF in the …
tunnel field-effect transistors (TFETs) is studied using 3-D device simulation. The RDF in the …