The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
Ultrawide-bandgap semiconductor AlN crystals: growth and applications
R Yu, G Liu, G Wang, C Chen, M Xu, H Zhou… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond
PJ Wellmann - Zeitschrift für anorganische und allgemeine …, 2017 - Wiley Online Library
Power electronics belongs to the future key technologies in order to increase system
efficiency as well as performance in automotive and energy saving applications. Silicon is …
efficiency as well as performance in automotive and energy saving applications. Silicon is …
Progress in performance of AlGaN‐based ultraviolet light emitting diodes
J Lang, F Xu, J Wang, L Zhang, X Fang… - Advanced Electronic …, 2025 - Wiley Online Library
AlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury
(Hg) pollution free, small size, high efficiency, and so on, and are widely used in military …
(Hg) pollution free, small size, high efficiency, and so on, and are widely used in military …
Toward Φ56 mm Al-polar AlN single crystals grown by the homoepitaxial PVT method
D Fu, D Lei, Z Li, G Zhang, J Huang, X Sun… - Crystal Growth & …, 2022 - ACS Publications
Crack-free and parasitic-free Al-polar aluminum nitride (AlN) single crystals up to Φ56 mm
were iteratively grown by the homoepitaxial physical vapor transport method. The detailed …
were iteratively grown by the homoepitaxial physical vapor transport method. The detailed …
Transition metal dichalcogenides nanomaterials based piezocatalytic activity: recent progresses and outlook
Piezoelectric materials have drawn significant attention from researchers in the recent past
as the piezo-potential, induced by applied external stress, generates an electric field, which …
as the piezo-potential, induced by applied external stress, generates an electric field, which …
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
In this paper, the optimal growth conditions during the physical vapour transport of bulk AlN
crystals are evaluated with regard to significantly increased deep UV transparency, while …
crystals are evaluated with regard to significantly increased deep UV transparency, while …
A review of ultrawide bandgap materials: properties, synthesis and devices
Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
Thermal conductivity of single-crystalline AlN
The thermal conductivity of AlN single crystals grown by physical vapor transport (PVT) and
hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω …
hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω …