Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

W Zhang, R Mazzarello, M Wuttig, E Ma - Nature Reviews Materials, 2019 - nature.com
The global demand for data storage and processing has increased exponentially in recent
decades. To respond to this demand, research efforts have been devoted to the …

[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials

W Zhang, E Ma - Materials Today, 2020 - Elsevier
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …

Computing vibrational spectra from ab initio molecular dynamics

M Thomas, M Brehm, R Fligg, P Vöhringer… - Physical Chemistry …, 2013 - pubs.rsc.org
We review several methods for the calculation of vibrational spectra from ab initio molecular
dynamics (AIMD) simulations and we present a new implementation in the trajectory …

The role of local structure in dynamical arrest

CP Royall, SR Williams - Physics Reports, 2015 - Elsevier
Amorphous solids, or glasses, are distinguished from crystalline solids by their lack of long-
range structural order. At the level of two-body structural correlations, glassformers show no …

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

P Noé, C Vallée, F Hippert, F Fillot… - … Science and Technology, 2017 - iopscience.iop.org
Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown
outstanding properties, which has led to their successful use for a long time in optical …

Design rules for phase‐change materials in data storage applications

D Lencer, M Salinga, M Wuttig - Advanced Materials, 2011 - Wiley Online Library
Phase‐change materials can rapidly and reversibly be switched between an amorphous
and a crystalline phase. Since both phases are characterized by very different optical and …

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

S Wintersteller, O Yarema, D Kumaar… - Nature …, 2024 - nature.com
The reversible phase transitions in phase-change memory devices can switch on the order
of nanoseconds, suggesting a close structural resemblance between the amorphous and …

Neural network interatomic potential for the phase change material GeTe

GC Sosso, G Miceli, S Caravati, J Behler… - Physical Review B …, 2012 - APS
GeTe is a prototypical phase change material of high interest for applications in optical and
electronic nonvolatile memories. We present an interatomic potential for the bulk phases of …

Bonding nature of local structural motifs in amorphous GeTe

VL Deringer, W Zhang, M Lumeij… - Angewandte Chemie …, 2014 - Wiley Online Library
Despite its simple chemical constitution and unparalleled technological importance, the
phase‐change material germanium telluride (GeTe) still poses fundamental questions. In …

How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration

R Gu, M Xu, C Qiao, CZ Wang, KM Ho, S Wang, M Xu… - Scripta Materialia, 2022 - Elsevier
The 3D integration technology in semiconductor fabrication requires a key component, the
ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped …