The quantum Hall effect in the era of the new SI
The quantum Hall effect (QHE), and devices reliant on it, will continue to serve as the
foundation of the ohm while also expanding its territory into other SI derived units. The …
foundation of the ohm while also expanding its territory into other SI derived units. The …
Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H–SiC
Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated
single-layer graphene-based photodetectors show low photoresponsivity (on the order of …
single-layer graphene-based photodetectors show low photoresponsivity (on the order of …
Analytical determination of atypical quantized resistances in graphene pn junctions
A mathematical approach is introduced for predicting quantized resistances in graphene pn
junction devices that utilize more than a single entry and exit point for electron flow …
junction devices that utilize more than a single entry and exit point for electron flow …
Dynamics of transient hole do** in epitaxial graphene
This work reports the dynamics of transient hole do** in epitaxial graphene devices by
using nitric acid as an adsorbent. The timescales associated with corresponding desorption …
using nitric acid as an adsorbent. The timescales associated with corresponding desorption …
[HTML][HTML] Versatility of uniformly doped graphene quantum Hall arrays in series
In this work, the limiting factors for develo** metrologically useful arrays from epitaxial
graphene on SiC are lifted with a combination of centimeter-scale, high-quality material …
graphene on SiC are lifted with a combination of centimeter-scale, high-quality material …
Variable strain in armchair and zigzag epitaxial graphene nanoribbons
We demonstrate the preparation of both armchair (AC) and zigzag (ZZ) epitaxial graphene
nanoribbons (GNRs) on 4 H-SiC using a polymer-assisted, sublimation growth method …
nanoribbons (GNRs) on 4 H-SiC using a polymer-assisted, sublimation growth method …
Spatial photoinduced do** of graphene/hBN heterostructures characterized by quantum Hall transport
Doped semiconductors are a central and crucial component of all integrated circuits. By
using a combination of white light and a focused laser beam, and exploiting hexagonal …
using a combination of white light and a focused laser beam, and exploiting hexagonal …
[HTML][HTML] Accessing ratios of quantized resistances in graphene p–n junction devices using multiple terminals
The utilization of multiple current terminals on millimeter-scale graphene p–n junction
devices has enabled the measurement of many atypical, fractional multiples of the quantized …
devices has enabled the measurement of many atypical, fractional multiples of the quantized …
Desorption timescales on epitaxial graphene via Fermi level shifting and Reststrahlen monitoring
This work reports information on the transience of hole do** in epitaxial graphene devices
when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes …
when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes …
Analysing quantized resistance behaviour in graphene Corbino pn junction devices
Just a few of the promising applications of graphene Corbino pnJ devices include two-
dimensional Dirac fermion microscopes, custom programmable quantized resistors, and …
dimensional Dirac fermion microscopes, custom programmable quantized resistors, and …