Berry phase effects on electronic properties

D **ao, MC Chang, Q Niu - Reviews of modern physics, 2010 - APS
Ever since its discovery the notion of Berry phase has permeated through all branches of
physics. Over the past three decades it was gradually realized that the Berry phase of the …

Electronic transport in two-dimensional graphene

S Das Sarma, S Adam, EH Hwang, E Rossi - Reviews of modern physics, 2011 - APS
A broad review of fundamental electronic properties of two-dimensional graphene with the
emphasis on density and temperature-dependent carrier transport in doped or gated …

Graphene: the new two‐dimensional nanomaterial

CNR Rao, AK Sood, KS Subrahmanyam… - Angewandte Chemie …, 2009 - Wiley Online Library
Every few years, a new material with unique properties emerges and fascinates the scientific
community, typical recent examples being high‐temperature superconductors and carbon …

Direct observation of a widely tunable bandgap in bilayer graphene

Y Zhang, TT Tang, C Girit, Z Hao, MC Martin, A Zettl… - Nature, 2009 - nature.com
The electronic bandgap is an intrinsic property of semiconductors and insulators that largely
determines their transport and optical properties. As such, it has a central role in modern …

Valley-contrasting physics in graphene: magnetic moment and topological transport

D **ao, W Yao, Q Niu - Physical review letters, 2007 - APS
We investigate physical properties that can be used to distinguish the valley degree of
freedom in systems where inversion symmetry is broken, using graphene systems as …

Tunable bandgap in silicene and germanene

Z Ni, Q Liu, K Tang, J Zheng, J Zhou, R Qin, Z Gao… - Nano …, 2012 - ACS Publications
By using ab initio calculations, we predict that a vertical electric field is able to open a band
gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap …

The electronic properties of bilayer graphene

E McCann, M Koshino - Reports on Progress in physics, 2013 - iopscience.iop.org
We review the electronic properties of bilayer graphene, beginning with a description of the
tight-binding model of bilayer graphene and the derivation of the effective Hamiltonian …

Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature

F **a, DB Farmer, Y Lin, P Avouris - Nano letters, 2010 - ACS Publications
Graphene is considered to be a promising candidate for future nanoelectronics due to its
exceptional electronic properties. Unfortunately, the graphene field-effect transistors (FETs) …

Electron-electron interactions in graphene: Current status and perspectives

VN Kotov, B Uchoa, VM Pereira, F Guinea… - Reviews of modern …, 2012 - APS
The problem of electron-electron interactions in graphene is reviewed. Starting from the
screening of long-range interactions in these systems, the existence of an emerging Dirac …

Gate-induced insulating state in bilayer graphene devices

JB Oostinga, HB Heersche, X Liu, AF Morpurgo… - Nature materials, 2008 - nature.com
The potential of graphene-based materials consisting of one or a few layers of graphite for
integrated electronics originates from the large room-temperature carrier mobility in these …