A status review of photovoltaic power conversion equipment reliability, safety, and quality assurance protocols
Data indicate that the inverter is the element of the photovoltaic plant that has the highest
number of service calls and the greatest operation and maintenance cost burden. This paper …
number of service calls and the greatest operation and maintenance cost burden. This paper …
State of the art and the future of wide band-gap devices
N Kaminski - 2009 13th European Conference on Power …, 2009 - ieeexplore.ieee.org
Silicon as a semiconductor material is well established and first choice for the vast majority
of devices. However, due to continuous device optimisation and improvements in the …
of devices. However, due to continuous device optimisation and improvements in the …
Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs
A review of the basic mechanisms affecting the stability of the threshold voltage in response
to a bias-temperature stress is presented in terms of the charging and activation of near …
to a bias-temperature stress is presented in terms of the charging and activation of near …
Reliability issues of SiC MOSFETs: A technology for high-temperature environments
CY Liangchun, GT Dunne, KS Matocha… - … on Device and …, 2010 - ieeexplore.ieee.org
The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for
applications where high temperature is required. The metal-oxide-semiconductor (MOS) …
applications where high temperature is required. The metal-oxide-semiconductor (MOS) …
A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets
Threshold voltage (VTH) shift due to bias temperature instability (BTI) is a well-known
problem in SiC mosfets that occurs due to oxide traps in the SiC/SiO2 gate interface. The …
problem in SiC mosfets that occurs due to oxide traps in the SiC/SiO2 gate interface. The …
Development of a SiC JFET-based six-pack power module for a fully integrated inverter
In this paper, a fully integrated silicon carbide (SiC)-based six-pack power module is
designed and developed. With 1200-V, 100-A module rating, each switching element is …
designed and developed. With 1200-V, 100-A module rating, each switching element is …
Effect of gate-oxide degradation on electrical parameters of silicon carbide MOSFETs
Although gate-oxide degradation occurs in both silicon (Si) and silicon carbide (SiC)
MOSFETs, it requires a special attention in SiC MOSFETs. This is because the gate oxide in …
MOSFETs, it requires a special attention in SiC MOSFETs. This is because the gate oxide in …
Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs
This work reports on three important aspects of threshold-voltage instability in SiC power
MOSFETs:(1) the threshold-voltage bias-temperature instability observed in commercial …
MOSFETs:(1) the threshold-voltage bias-temperature instability observed in commercial …
SiC MOSFET threshold-stability issues
This work provides additional insight into the threshold-voltage instability effect generally
observed, to varying degrees, in SiC MOSFETs, and discusses the need for an improved test …
observed, to varying degrees, in SiC MOSFETs, and discusses the need for an improved test …
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions
Abstract Silicon carbide (SiC) MOSFETs power modules are very attractive devices and are
already available in the market. Nevertheless, despite technological progress, reliability …
already available in the market. Nevertheless, despite technological progress, reliability …