Y2O3-Based Crossbar Array for Analog and Neuromorphic Computation
Here, we report an implementation of ()-based memristive crossbar array (MCA) out of a total
dimension of () array fabricated by utilizing a dual ion beam sputtering (DIBS) system. The …
dimension of () array fabricated by utilizing a dual ion beam sputtering (DIBS) system. The …
Electroforming-Free Y2O3 Memristive Crossbar Array with Low Variability
Transition metal oxides play a very important role to develop the memristive crossbar array
for nonvolatile memory for storage and logic operations. However, the development of a …
for nonvolatile memory for storage and logic operations. However, the development of a …
Electrical Performance of Large-Area Y2O3 Memristive Crossbar Array With Ultralow C2C Variability
Here, we report the electrical performance analysis of a Y 2 O 3-based memristive crossbar
array (MCA) of () on a large Si (100) wafer having a 3-inch diameter by utilizing dual-ion …
array (MCA) of () on a large Si (100) wafer having a 3-inch diameter by utilizing dual-ion …
Experimental Validation of Switching Dependence of Nanoscale Y2O3 Memristors on Electrode Symmetry via Physical Electrothermal Modeling
In this work, the impact of symmetric and asymmetric electrodes on the resistive switching
(RS) behavior of the nanoscale Y2O3-based memristor is investigated with experiments. In …
(RS) behavior of the nanoscale Y2O3-based memristor is investigated with experiments. In …
Analytical modeling of MgZnO/ZnO MOSHEMT based biosensor for biomolecule detection
In recent development, the High Electron Mobility Transistor (HEMT) technology was used
for biosensor applications. In this contribution, an analytical model of MgZnO/ZnO …
for biosensor applications. In this contribution, an analytical model of MgZnO/ZnO …
Investigation of DIBS-deposited CdZnO/ZnO-based multiple quantum well for large-area photovoltaic application
Multiple quantum wells (MQWs) of CdZnO/ZnO are realized, for the first time, by dual ion
beam sputtering (DIBS) system at different deposition conditions in terms of ion beam power …
beam sputtering (DIBS) system at different deposition conditions in terms of ion beam power …
Analytical study of MgZnO/ZnO heterostructure field effect transistor for power switching
We investigate the power switching mechanism to evaluate the power loss (PD) and
efficiency (ɳ) in MgZnO/ZnO (MZO)‐based power heterostructure field effect transistor …
efficiency (ɳ) in MgZnO/ZnO (MZO)‐based power heterostructure field effect transistor …
Y2O3-based memristive crossbar array for synaptic learning
Here, we report the fabrication of an Y 2 O 3-based memristive crossbar array along with an
analytical model to evaluate the performance of the memristive array system to understand …
analytical model to evaluate the performance of the memristive array system to understand …
Impact of ZnO Cap Layer on the Performance of MgZnO/CdZnO Heterostructure With YO Spacer Layer
In this work, we report the impact of the ZnO cap layer on mobility (), sheet carrier density (),
and conductance () of dual ion beam sputtering (DIBS) grown MgZnO/CdZnO (MCO) …
and conductance () of dual ion beam sputtering (DIBS) grown MgZnO/CdZnO (MCO) …
[PDF][PDF] Analytical study of ZnO-based HEMT for power switching
We investigate the power switching mechanism to evaluate the power loss (PD) and
efficiency (η) in MgZnO/ZnO (MZO)-based power high electron mobility transistor (HEMT) …
efficiency (η) in MgZnO/ZnO (MZO)-based power high electron mobility transistor (HEMT) …