Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Domains in ferroelectrics were considered to be well understood by the middle of the last
century: They were generally rectilinear, and their walls were Ising-like. Their simplicity …

Halide perovskite (HaP) semiconductors are revolutionizing photovoltaic (PV) solar energy
conversion by showing remarkable performance of solar cells made with HaPs, especially …

Long viewed as a topic in classical physics, ferroelectricity can be described by a quantum
mechanical ab initio theory. Thin-film nanoscale device structures integrated onto Si chips …

Memristors are continuously tunable resistors that emulate biological synapses,.
Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of …

The control of magnetism by electric fields is an important goal for the future development of
low-power spintronics. Various approaches have been proposed on the basis of either …

Ferroelectrics are materials exhibiting spontaneous electric polarization due to dipoles
formed by displacements of charged ions inside the crystal unit cell. Their exceptional …

Domains in ferroelectric films are usually smooth, stripelike, very thin compared with
magnetic ones, and satisfy the Landau-Lifshitz-Kittel scaling law (width proportional to …

Domain walls (DWs) in ferroelectric/ferroic materials have been a central research focus for
the last 50 years; DWs bear a multitude of extraordinary physical parameters within a unit …