We present our work on high performance germanium (Ge) quantum dot (QD)
photodetectors (PDs), fabricated on Si and Ge substrates, that operate via tunneling …

In this work we prepared films of amorphous germanium nanoparticles embedded in SiO2
deposited by magnetron sputtering on Si and quartz heated substrates at 300, 400 and 500° …

We report on high responsivity, broadband metal/insulator/semiconductor photodetectors
with amorphous Ge quantum dots (a-Ge QDs) as the active absorbers embedded in a silicon …

An ultrathin layer (13 nm) of germanium (Ge) quantum dots embedded in a SiO 2 matrix was
deposited on a Ge substrate for photodetection in both the visible and near-infrared (IR) …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

This chapter covers recent advances in SiGe based detector technology, including device
operation, fabrication processes, and various optoelectronic applications. Optical sensing …

To address the yet open question regarding the nature of quantum confinement in Ge
nanocrystals (Ge NCs) we employed scanning tunneling spectroscopy to monitor the …

The present work reports the structural, optical, and luminescence properties of Ge/Al 2 O 3
multilayers prepared using electron beam evaporation followed by conventional furnace …

Ge/Si core/shell quantum dots (QDs) recently received extensive attention due to their
specific properties induced by the confinement effects of the core and shell structure. They …

We report a systematic study of time-resolved and power-dependent photoresponse in high-
efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum …