Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as
a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently …

A review of the effectsof proton, neutron, γ-ray, and electron irradiation on GaN materials
and devices is presented. Neutron irradiation tends to create disordered regions in the GaN …

We investigate point defects and defect complexes in AlN for potential applicability as single-
spin centers and solid-state qubits analogous to those observed in diamond and SiC. We …

In this Rapid Communication, we report positron annihilation results on in-grown and proton
irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals …

Positron annihilation spectra reveal isolated zinc vacancy (V Zn) creation in single-crystal
ZnO exposed to 193-nm radiation at 100 mJ/cm 2 fluence. The appearance of a …

Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …

Experimental evidence on low energy electron beam induced point defect activation in GaN
grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are …

We have applied positron annihilation spectroscopy to study native point defects in Te-
doped n-type and nominally undoped p-type GaSb single crystals. The results show that the …

By means of density functional theory, we argue that ferromagnetism in GaN can be induced
by vacancy complexes. Spin polarization originates from the charge compensation between …