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Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trap** effects, and relaxation
Recent advances in experimental techniques (on-the-fly and ultrafast techniques) allow
measurement of threshold voltage degradation due to negative-bias temperature instability …
measurement of threshold voltage degradation due to negative-bias temperature instability …
Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures
MH White - Solid-State Electronics, 2000 - Elsevier
The charge retention characteristics in scaled SONOS nonvolatile memory devices with an
effective gate oxide thickness of 94 Å and a tunnel oxide of 15 Å are investigated in a …
effective gate oxide thickness of 94 Å and a tunnel oxide of 15 Å are investigated in a …
An analytical retention model for SONOS nonvolatile memory devices in the excess electron state
We present an analytical retention model for scaled SONOS devices in the excess electron
state. In this model, trap-to-band tunneling and thermal excitation discharge mechanisms …
state. In this model, trap-to-band tunneling and thermal excitation discharge mechanisms …
Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures
H Bachhofer, H Reisinger, E Bertagnolli… - Journal of Applied …, 2001 - pubs.aip.org
The voltage-and time-dependence of the tunneling currents in polysilicon–oxide–nitride–
oxide semiconductor structures have been investigated. Electron and hole contributions …
oxide semiconductor structures have been investigated. Electron and hole contributions …
On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus …
Negative bias temperature instability (NBTI) is studied in plasma (PNO) and thermal (TNO)
Si-oxynitride devices having varying EOT. Threshold voltage shift (DeltaV T) and its field (E …
Si-oxynitride devices having varying EOT. Threshold voltage shift (DeltaV T) and its field (E …
A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures
E Suzuki, H Hiraishi, K Ishii… - IEEE Transactions on …, 1983 - ieeexplore.ieee.org
Theoretical and experimental investigations to obtain lower voltage electrically erasable and
programmable ROM's (EEPROM's) than conventional devices have been performed. The …
programmable ROM's (EEPROM's) than conventional devices have been performed. The …
Nonvolatile semiconductor memory devices
JJ Chang - Proceedings of the IEEE, 1976 - ieeexplore.ieee.org
An attempt is made to survey and assess the nonvolatile semiconductor memory devices
including charge-storage devices and FET's with ferroelectric gate insulators. The charge …
including charge-storage devices and FET's with ferroelectric gate insulators. The charge …
KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices
E Abbaspour, S Menzel, A Hardtdegen… - IEEE transactions on …, 2018 - ieeexplore.ieee.org
This paper presents a physical model to investigate the electroforming, set and reset
processes in Redox-based resistive switching RAM based on the valence change …
processes in Redox-based resistive switching RAM based on the valence change …
A comparison of very fast to very slow components in degradation and recovery due to NBTI and bulk hole trap** to existing physical models
H Reisinger, O Blank, W Heinrigs… - … on Device and …, 2007 - ieeexplore.ieee.org
A new measuring technique with a 1mus measuring delay and a direct VT determination has
been employed. The response to stress times as short as 100 mus to 10 5 has been studied …
been employed. The response to stress times as short as 100 mus to 10 5 has been studied …
Hole traps in silicon dioxide
MH Woods, R Williams - Journal of Applied Physics, 1976 - pubs.aip.org
We have measured the properties of holes trapped in an SiO2 layer by application of a large
electric field. The high field (1.4× 107 V/cm) was obtained by applying a negative corona …
electric field. The high field (1.4× 107 V/cm) was obtained by applying a negative corona …