Atom‐by‐atom fabrication of single and few dopant quantum devices
Atomically precise fabrication has an important role to play in develo** atom‐based
electronic devices for use in quantum information processing, quantum materials research …
electronic devices for use in quantum information processing, quantum materials research …
Fabrication of a novel polymer inclusion membrane from recycled polyvinyl chloride for the real-time extraction of arsenic (V) from water samples in a continuous …
In this work, the integration of recycled polyvinyl chloride (PVC) material as a base polymer
and benzalkonium chloride (BAC) as an extractant to develop low-cost Polymer Inclusion …
and benzalkonium chloride (BAC) as an extractant to develop low-cost Polymer Inclusion …
Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography
Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD)
transistors, based on phosphorous atoms isolated within nanoscale SiO 2 tunnel barriers, is …
transistors, based on phosphorous atoms isolated within nanoscale SiO 2 tunnel barriers, is …
An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor
The single electron transistor (SET) as a nanoscale transistor operates according to the
electron tunneling via two tunnel junctions. Since selecting a suitable island material plays a …
electron tunneling via two tunnel junctions. Since selecting a suitable island material plays a …
The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions
AE Ieshkin, DS Kireev, YA Ermakov, AS Trifonov… - Nuclear Instruments and …, 2018 - Elsevier
The gas cluster ion beam technique was used for the silicon carbide crystal surface
smoothing. The effect of processing by two inert cluster ions, argon and xenon, was …
smoothing. The effect of processing by two inert cluster ions, argon and xenon, was …
Sequential reduction of the silicon single-electron transistor structure to atomic scale
Here we present an original CMOS compatible fabrication method of a single-electron
transistor structure with extremely small islands, formed by solitary phosphorus dopants in …
transistor structure with extremely small islands, formed by solitary phosphorus dopants in …
Single electron transistor scheme based on multiple quantum dot islands: carbon nanotube and fullerene
V Khademhosseini, D Dideban… - ECS Journal of Solid …, 2018 - iopscience.iop.org
Single electron transistor (SET) is a nano dimension device that is offered by technology to
solve the problem of aggressive scaling in traditional transistors. Its operation speed …
solve the problem of aggressive scaling in traditional transistors. Its operation speed …
Schemes for single electron transistor based on double quantum dot islands utilizing a graphene nanoscroll, carbon nanotube and fullerene
The single electron transistor (SET) is a nanoscale switching device with a simple equivalent
circuit. It can work very fast as it is based on the tunneling of single electrons. Its …
circuit. It can work very fast as it is based on the tunneling of single electrons. Its …
Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator
We present the original method for fabricating a sensitive field/charge sensor based on field
effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only …
effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only …
Design and synthesis of novel terpyridine-based ligands with one and two terminal aurophilic moieties and their Rh (III) and Ru (II) complexes for the adsorption on …
IO Salimova, AV Berezina, IA Shikholina, NV Zyk… - Polyhedron, 2021 - Elsevier
Novel terpyridine ligands with one and two terminal aurophilic sulfur containing
fragments,(S)-11-(4-([2, 2′: 6′, 2 ″-terpyridin]-4′-yl) phenoxy) undecyl 5-(1, 2-dithiolan-3 …
fragments,(S)-11-(4-([2, 2′: 6′, 2 ″-terpyridin]-4′-yl) phenoxy) undecyl 5-(1, 2-dithiolan-3 …