Electronic states in GaAs-(Al, Ga) As eccentric quantum rings under nonresonant intense laser and magnetic fields

JA Vinasco, A Radu, E Niculescu, ME Mora-Ramos… - Scientific Reports, 2019‏ - nature.com
The features of the electron energy spectrum in eccentric two-dimensional GaAs-AlGaAs
quantum rings of circular shape are theoretically investigated taking into account the effect of …

[ספר][B] Scanning-probe electronic imaging of lithographically patterned quantum rings

F Martins, D Cabosart, H Sellier, MG Pala, B Hackens… - 2018‏ - Springer
Quantum rings patterned from two-dimensional semiconductor heterostructures exhibit a
wealth of quantum transport phenomena at low temperature and in a magnetic field that can …

Fabrication of multiple concentric nanoring structures

C Somaschini, S Bietti, N Koguchi, S Sanguinetti - Nano letters, 2009‏ - ACS Publications
We present the fabrication of GaAs/AlGaAs Multiple (from three to five) concentric nanoring
structures by an innovative growth method based on droplet epitaxy and characterized by …

Regimes of GaAs quantum dot self-assembly by droplet epitaxy

C Heyn, A Stemmann, A Schramm, H Welsch… - Physical Review B …, 2007‏ - APS
Two regimes are observed for the density of strain-free GaAs quantum dots (QDs) grown by
Ga droplet epitaxy. QDs grown from liquid Ga droplets deposited at temperatures up to 200° …

Unified model of droplet epitaxy for compound semiconductor nanostructures: experiments and theory

K Reyes, P Smereka, D Nothern, JM Millunchick… - Physical Review B …, 2013‏ - APS
We present a unified model of compound semiconductor growth based on kinetic Monte
Carlo simulations in tandem with experimental results that can describe and predict the …

Local droplet etching of nanoholes and rings on GaAs and AlGaAs surfaces

A Stemmann, C Heyn, T Köppen, T Kipp… - Applied Physics …, 2008‏ - pubs.aip.org
We study the formation of nanoholes and rings on GaAs and AlGaAs surfaces by local
droplet etching (LDE) with gallium and indium. The nanohole properties are tuned by …

Linear and nonlinear optical absorption coefficients in GaAs/Ga1− xAlxAs concentric double quantum rings: Effects of hydrostatic pressure and aluminum …

HM Baghramyan, MG Barseghyan, AA Kirakosyan… - Journal of …, 2013‏ - Elsevier
The linear and nonlinear intra-band optical absorption coefficients in GaAs/Ga 1− x Al x As
two-dimensional concentric double quantum rings are investigated. Taking into account the …

Self-assembly of symmetric GaAs quantum dots on (111) A substrates: Suppression of fine-structure splitting

T Mano, M Abbarchi, T Kuroda… - Applied physics …, 2010‏ - iopscience.iop.org
Great suppression of fine-structure splitting (FSS) is demonstrated in self-assembled GaAs
quantum dots (QDs) grown on AlGaAs (111) A surface. Due to the three-fold rotational …

Self-assembly of laterally aligned GaAs quantum dot pairs

M Yamagiwa, T Mano, T Kuroda, T Tateno… - Applied physics …, 2006‏ - pubs.aip.org
The authors report the fabrication of self-assembled, strain-free Ga As∕ Al 0.27 Ga 0.73 As
quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet …

Polaron and conduction band non-parabolicity effects on the binding energy, diamagnetic susceptibility and polarizability of an impurity in quantum rings

K El-Bakkari, A Sali, E Iqraoun, A Ezzarfi - Superlattices and …, 2020‏ - Elsevier
By employing a variational approach, we have investigated the effect of conduction band
non-parabolicity (NP) on the binding energy (E b) and the susceptibility diamagnetic (χ dia) …