Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides

Y Wang, S Sarkar, H Yan, M Chhowalla - Nature Electronics, 2024 - nature.com
The development of high-performance electronic devices based on two-dimensional (2D)
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …

van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides

L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …

Two-dimensional perovskite oxide as a photoactive high-κ gate dielectric

S Li, X Liu, H Yang, H Zhu, X Fang - Nature Electronics, 2024 - nature.com
High dielectric constant (high-κ) gate dielectrics compatible with two-dimensional (2D)
semiconductors are essential for scaled optoelectronic devices. However, conventional …

Wafer-scale and universal van der Waals metal semiconductor contact

L Kong, R Wu, Y Chen, Y Huangfu, L Liu, W Li… - Nature …, 2023 - nature.com
Van der Waals (vdW) metallic contacts have been demonstrated as a promising approach to
reduce the contact resistance and minimize the Fermi level pinning at the interface of two …

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

D Zeng, Z Zhang, Z Xue, M Zhang, PK Chu, Y Mei… - Nature, 2024 - nature.com
Abstract Two-dimensional (2D) structures composed of atomically thin materials with high
carrier mobility have been studied as candidates for future transistors,,–. However, owing to …

General approach for two-dimensional rare-earth oxyhalides with high gate dielectric performance

B Zhang, Y Zhu, Y Zeng, Z Zhao, X Huang… - Journal of the …, 2023 - ACS Publications
Two-dimensional (2D) rare-earth oxyhalides (REOXs) with novel properties offer fascinating
opportunities for fundamental research and applications. The preparation of 2D REOX …

Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices

Z Luo, X Song, X Liu, X Lu, Y Yao, J Zeng, Y Li… - Science …, 2023 - science.org
Understanding spinterfaces between magnetic metals and organic semiconductors is
essential to unlock the great potentials that organic materials host for spintronic applications …

One-Step Solution Patterning for Two-Dimensional Perovskite Nanoplate Arrays

YH Lee, JY Park, P Niu, H Yang, D Sun, L Huang… - ACS …, 2023 - ACS Publications
Two-dimensional perovskite crystals have attracted significant attention for their diverse
optoelectronic characteristics, owing to their superior semiconducting properties. However …

Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses

L Zhang, Z Liu, W Ai, J Chen, Z Lv, B Wang, M Yang… - Nature …, 2024 - nature.com
Integrating thin atomic-layer-deposited dielectrics with two-dimensional (2D)
semiconductors could be used to fabricate 2D transistors with sub-1 nm capacitance …

Selective‐Area Growth of Aligned Organic Semiconductor Nanowires and Their Device Integration

X Wang, Y Luo, J Liao, E Joselevich… - Advanced Functional …, 2024 - Wiley Online Library
The simultaneous control of the orientation and position of organic semiconductor
nanowires remains a major challenge when integrating them into monolithic devices. In this …