Wafer-scale nanofabrication of telecom single-photon emitters in silicon

M Hollenbach, N Klingner, NS Jagtap… - Nature …, 2022 - nature.com
A highly promising route to scale millions of qubits is to use quantum photonic integrated
circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and …

Hyperfine spectroscopy of isotopically engineered group-IV color centers in diamond

IBW Harris, CP Michaels, KC Chen, RA Parker, M Titze… - PRX Quantum, 2023 - APS
A quantum register coupled to a spin-photon interface is a key component in quantum
communication and information processing. Group-IV color centers in diamond (Si V−, Ge …

Efficient photonic integration of diamond color centers and thin-film lithium niobate

D Riedel, H Lee, JF Herrmann, J Grzesik, V Ansari… - ACS …, 2023 - ACS Publications
On-chip photonic quantum circuits with integrated quantum memories have the potential to
radically advance hardware for quantum information processing. In particular, negatively …

High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

V Chandrasekaran, M Titze, AR Flores… - Advanced …, 2023 - Wiley Online Library
Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap
semiconductors with nanometer spatial resolution. However, the fact that only a few percent …

Selective generation of V2 silicon vacancy centers in 4H-silicon carbide

Y Xue, M Titze, J Mack, Z Yang, L Zhang, SS Su… - Nano Letters, 2024 - ACS Publications
The deterministic generation of individual color centers with defined orientations or types in
solid-state systems is paramount for advancements in quantum technologies. Silicon …

Fabrication of single color centers in sub-50 nm nanodiamonds using ion implantation

X Xu, ZO Martin, M Titze, Y Wang, D Sychev… - …, 2023 - degruyter.com
Diamond color centers have been widely studied in the field of quantum optics. The
negatively charged silicon vacancy (SiV−) center exhibits a narrow emission linewidth at the …

Effect of negative thermal expansion on the zero-phonon line of implanted silicon vacancy color centers in diamond

S Revesz, A Misiara, JBS Abraham, ES Bielejec… - ACS …, 2024 - ACS Publications
The charged silicon vacancy (SiV–) color center in diamond can be created by focused ion
beam (FIB) implantation, allowing deterministic creation of single photon emitters. Here, we …

[HTML][HTML] A multi-electrode two-dimensional position sensitive diamond detector

S Ditalia Tchernij, D Siciliano, G Provatas… - Applied physics …, 2024 - pubs.aip.org
In multi-electrode devices, charge pulses at all the electrodes are induced concurrently by
the motion of the excess charge carriers generated by a single ion. This charge-sharing …

Deterministic nanoscale quantum spin-defect implantation and diffraction strain imaging

N Delegan, SJ Whiteley, T Zhou, SL Bayliss… - …, 2023 - iopscience.iop.org
Local crystallographic features negatively affect quantum spin defects by changing the local
electrostatic environment, often resulting in degraded or varied qubit optical and coherence …

Properties of Donor Qubits in Formed by Indium-Ion Implantation

X Wang, C Zimmermann, M Titze, V Niaouris… - Physical Review …, 2023 - APS
Neutral shallow donors (D 0) in Zn O have emerged as a promising candidate for solid-state
spin qubits. Here we report on the formation of D 0 in Zn O via implantation of In and …