Fundamentals of the nanowire solar cell: Optimization of the open circuit voltage
Present day nanowire solar cells have reached an efficiency of 17.8%. Nanophotonic
engineering by nanowire tapering allows for high solar light absorption. In combination with …
engineering by nanowire tapering allows for high solar light absorption. In combination with …
Active tuning of surface phonon polariton resonances via carrier photoinjection
Surface phonon polaritons (SPhPs) are attractive alternatives to infrared plasmonics for
subdiffractional confinement of infrared light. Localized SPhP resonances in semiconductor …
subdiffractional confinement of infrared light. Localized SPhP resonances in semiconductor …
Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
III/V semiconductor nanostructures have significant potential in device applications, but
effective surface passivation is critical due to their large surface-to-volume ratio. For InP such …
effective surface passivation is critical due to their large surface-to-volume ratio. For InP such …
Growth and photoelectrochemical energy conversion of wurtzite indium phosphide nanowire arrays
Photoelectrochemical (PEC) water splitting into hydrogen and oxygen is a promising
strategy to absorb solar energy and directly convert it into a dense storage medium in the …
strategy to absorb solar energy and directly convert it into a dense storage medium in the …
Ultralow surface recombination velocity in passivated InGaAs/InP nanopillars
A Higuera-Rodriguez, B Romeira, S Birindelli… - Nano …, 2017 - ACS Publications
The III–V semiconductor InGaAs is a key material for photonics because it provides optical
emission and absorption in the 1.55 μm telecommunication wavelength window. However …
emission and absorption in the 1.55 μm telecommunication wavelength window. However …
AlGaInP-based Micro-LED array with enhanced optoelectrical properties
S Han, C Xu, H Li, S Liu, H Xu, Y Zhu, A Fang, X Wang - Optical Materials, 2021 - Elsevier
The micro lighting-emitting diode (Micro-LED) array devices have attracted attention due to
increasing demand in augmented reality (AR), virtual reality (VR), LIFI light source, and other …
increasing demand in augmented reality (AR), virtual reality (VR), LIFI light source, and other …
Exploring the size limitations of wurtzite III–V film growth
Metastable crystal phases of abundant semiconductors such as III–Vs, Si, or Ge comprise
enormous potential to address current limitations in green light-emitting electrical diodes …
enormous potential to address current limitations in green light-emitting electrical diodes …
Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths
Future expansion of computing capabilities relies on a reduction of energy consumption in
silicon-based integrated circuits. A promising solution is to replace electrical wires with …
silicon-based integrated circuits. A promising solution is to replace electrical wires with …
Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling
InP nanowire arrays with axial pin junctions are promising devices for next-generation
photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in …
photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in …
Concurrent zinc-blende and wurtzite film formation by selection of confined growth planes
Recent research on nanowires (NWs) demonstrated the ability of III–V semiconductors to
adopt a different crystallographic phase when they are grown as nanostructures, giving rise …
adopt a different crystallographic phase when they are grown as nanostructures, giving rise …