Stochastic charge trap** in oxides: From random telegraph noise to bias temperature instabilities
T Grasser - Microelectronics Reliability, 2012 - Elsevier
Charge trap** at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trap** has long been made responsible for random telegraph and 1/f …
particular, charge trap** has long been made responsible for random telegraph and 1/f …
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …
Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability
An overview over issues and findings in SiC power MOSFET reliability is given. The focus of
this article is on threshold instabilities and the differences to Si power MOSFETs …
this article is on threshold instabilities and the differences to Si power MOSFETs …
The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
One of the most important degradation modes in CMOS technologies, the bias temperature
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …
Origin of NBTI variability in deeply scaled pFETs
The similarity between Random Telegraph Noise and Negative Bias Temperature Instability
(NBTI) relaxation is further demonstrated by the observation of exponentially-distributed …
(NBTI) relaxation is further demonstrated by the observation of exponentially-distributed …
Elucidating the Multi‐Timescale Variability of a Canopy Urban Heat Island by Using the Short‐Time Fourier Transform
Taking the megacity of Bei**g as an example, a short‐time Fourier transform (STFT) method
was employed to extract the multi‐timescale evolution pattern of the canopy urban heat …
was employed to extract the multi‐timescale evolution pattern of the canopy urban heat …
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC-and AC-stress
The physical origin of the Negative Bias Temperature Instability (NBTI) is still under debate.
In this work we analyze the single defects constituting NBTI. We introduce a new …
In this work we analyze the single defects constituting NBTI. We introduce a new …
Controversial issues in negative bias temperature instability
In spite of 50 years of history, there is still no consensus on the basic physics of Negative
Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric …
Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric …
Understanding BTI in SiC MOSFETs and its impact on circuit operation
The threshold voltage hysteresis in SiC power MOSFETs is rarely studied. This paper
investigates the captureand emission-time constants of positive and negative charge …
investigates the captureand emission-time constants of positive and negative charge …
Atomistic approach to variability of bias-temperature instability in circuit simulations
B Kaczer, S Mahato… - 2011 International …, 2011 - ieeexplore.ieee.org
A blueprint for an atomistic approach to introducing time-dependent variability into a circuit
simulator in a realistic manner is demonstrated. The approach is based on previously …
simulator in a realistic manner is demonstrated. The approach is based on previously …