Memristive devices have become promising candidates to complement the CMOS
technology, due to their CMOS manufacturing process compatibility, zero standby power …

Memristive devices have become promising candidates to complement and/or replace the
CMOS technology, due to their CMOS manufacturing process compatibility, zero standby …

This work presents an efficient test technique for detecting resistive short defects in STT-
MRAM arrays. The proposed technique is based on monitoring the current mismatch flowing …

Abstract Resistive defects in FinFET SRAMs are an important challenge for manufacturing
test in submicron technologies, as they may cause dynamic faults, which are hard to detect …

Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD)
faults always cause incorrect behavior, and therefore are easily detected by applying …

This paper proposes a low-cost yet high-coverage design-for-testability (DFT) scheme for
improving the detection of hard-to-detect (HtD) faults in STT-MRAMs. It is based on …

This paper proposes a design-for-testability (DFT) scheme and a test method to improve the
detection of hard-to-detect (HtD) faults of STT-MRAMs. The proposed DFT scheme …

Spin-Transfer-Torque Magnetic RAM (STT-MRAM) is a promising memory technology due to
its ultra-integration density capability; nanosecond read and write operation speeds and …

Rapid advancement in deep submicron technology has resulted in the highest occupancy of
memory on system-on-chip. The impact of process variations has increased with advanced …

Advancements in integrated circuit technologies, increasing manufacturing complexity and
incessant device scaling inflict new challenges in memory testing and demand for new …