The physics of doped Mott insulators is at the heart of some of the most exotic physical
phenomena in materials research including insulator-metal transitions, colossal …

Different monolayer phases of Sn on Si (111) 7× 7 have been studied by means of scanning
tunneling microscopy (STM), core-level photoelectron spectroscopy (XPS), and Rutherford …

Switching the crystalline phase of a material via electrostatic control is a proven strategy for
develo** memory devices such as memristors that are based on nonvolatile resistance …

By means of scanning tunneling microscopy (STM) we have performed a detailed analysis
of the initial stages of Sn adsorption on Si (111)-(7× 7) at room temperature (RT). At very low …

Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-
dimensional quantum matter phases, such as charge density waves, spin density waves and …

A method to form epitaxial Ge 1− x Sn x quantum dots (QDs) on Si (111) substrates has
been developed by codeposition of Ge and Sn on ultrathin SiO 2 films with predeposited Ge …

Using in situ ultrahigh vacuum reflection electron microscopy, we have studied structural
transitions on the Si (1 1 1) surface induced by Sn deposition up to 2 ML coverage (1 ML …

Surface morphologies and electronic structures of Sn thin films prepared on Si (111)-Sn (2
3× 2 3) R 30° substrate are investigated by low temperature scanning tunneling …

The atomic structure of well-ordered single steps on the Si (111)− 3× 3− Sn surface and the
dynamics of Sn adatoms in the vicinity of these steps was studied. The work was performed …

The Si (111) surface with an average coverage of slightly more than one monolayer of Sn,
exhibits a 2 3× 2 3 reconstruction below 463 K. In the literature, atomic structure models with …