The fundamentals and applications of ferroelectric HfO2
U Schroeder, MH Park, T Mikolajick… - Nature Reviews …, 2022 - nature.com
Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …
have attracted much interest from the ferroelectric materials and devices community …
Ferroelectric field-effect transistors based on HfO2: a review
In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
With the scaling of lateral dimensions in advanced transistors, an increased gate
capacitance is desirable both to retain the control of the gate electrode over the channel and …
capacitance is desirable both to retain the control of the gate electrode over the channel and …
Enhanced ferroelectricity in ultrathin films grown directly on silicon
Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field
Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …
nanoscale devices because of their ability to integrate into silicon electronics. However, the …
[HTML][HTML] Next generation ferroelectric materials for semiconductor process integration and their applications
Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …
Scale-free ferroelectricity induced by flat phonon bands in HfO2
Discovery of robust yet reversibly switchable electric dipoles at reduced dimensions is
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices
Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …
Emergent ferroelectricity in subnanometer binary oxide films on silicon
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …