This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …

After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of
diminishing returns. The use of new semiconductor channel materials with improved …

In this paper, we report state-of-the-art high frequency performance of GaN-based high
electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative …

This letter presents a self-aligned InGaAs quantum-well MOSFET with a transconductance,
gm, max, of 3.45 mS/μm at V ds= 0.5 V. This is a record value among III-V FETs of any kind …

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …

We have developed a self-aligned L g= 55 nm In 0.53 Ga 0.47 As MOSFET incorporating
metal-organic chemical vapor deposition regrown n++ In 0.53 Ga 0.47 As source and drain …

The physics of off-state drain leakage (I off) in scaled self-aligned InGaAs quantum-well
(QW) MOSFETs is investigated through experiments and simulations. Excess I off is …

In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with
vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture …

Using a novel gate-last process scheme that affords precise channel thickness control, we
have fabricated self-aligned InGaAs quantum-well (QW) MOSFETs. Devices with a channel …

In this work, we will give an overview of the innovations in materials and new device
concepts that will be needed to continue Moore's law to the sub-10 nm technology nodes. To …