Tunable electronic trap energy in sol-gel processed dielectrics
We demonstrate the electronic trap energy distribution (ΔE IL) in the wide bandgap,
nonconventional aluminum oxide phosphate (ALPO) dielectrics. The trap energy distribution …
nonconventional aluminum oxide phosphate (ALPO) dielectrics. The trap energy distribution …
Hybrid-density functional theory study on the band structures of tetradymite-Bi2Te3, Sb2Te3, Bi2Se3, and Sb2Se3 thermoelectric materials
S Park, B Ryu - Journal of the Korean Physical Society, 2016 - Springer
The low-energy band structure near the band gap determines the electrical performance of
thermoelectric materials. Here, by using the hybrid-density functional theory (hybrid-DFT) …
thermoelectric materials. Here, by using the hybrid-density functional theory (hybrid-DFT) …
The effect of a Ta oxygen scavenger layer on HfO 2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport
Reversible resistive switching between high-resistance and low-resistance states in metal–
oxide–metal heterostructures makes them very interesting for applications in random access …
oxide–metal heterostructures makes them very interesting for applications in random access …
Electronic bulk and surface properties of titanium dioxide studied by DFT-1/2
Transparent conductive oxides, such as TiO2, are important functional materials for
optoelectronic and photovoltaic devices. We investigate the electronic bulk properties of the …
optoelectronic and photovoltaic devices. We investigate the electronic bulk properties of the …
[HTML][HTML] The effect of surface orientation on band alignment and carrier transfer at WS2/CdS interface: Insight from first-principles calculations
K Cheng, P Wu, W Hu, L Wu, X Guo, S Guo… - Journal of Applied …, 2024 - pubs.aip.org
Loading of WS 2 can greatly improve water splitting H 2 generation efficiency of CdS in
experiments. Here, we constructed WS 2/CdS (100) and WS 2/CdS (110) heterostructures …
experiments. Here, we constructed WS 2/CdS (100) and WS 2/CdS (110) heterostructures …
Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO 2-based resistive switching memory: beyond filament and charge …
H Nakamura, Y Asai - Physical Chemistry Chemical Physics, 2016 - pubs.rsc.org
We studied the quantum transport mechanism of an ultra-thin HfO2-based resistive random
access memory (ReRAM) cell with TiN electrodes and proposed the design of a sub-10 nm …
access memory (ReRAM) cell with TiN electrodes and proposed the design of a sub-10 nm …
Hybrid reactant-enabled atomic layer deposition of HfO2 for enhancing metal-insulator-metal capacitor fabricated on TiN electrode
IG Lee, WY Park, YU Ryu, W Jeon - Materials Today Communications, 2024 - Elsevier
Dynamic random access memory (DRAM) capacitors rely on the high-performance of metal-
insulator-metal (MIM) structures for stable operation. Among the materials investigated for …
insulator-metal (MIM) structures for stable operation. Among the materials investigated for …
Epitaxial Co on GaN by decomposition of template CoO
N Qiu, W **ng, R Yu, F Meng - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
Metal/semiconductor heterojunctions have attracted interest for many years due to their
importance in electronic device applications. Usually, owing to a large lattice mismatch …
importance in electronic device applications. Usually, owing to a large lattice mismatch …
Effects of intrinsic defects on effective work function for Ni/HfO2 interfaces
K Zhong, G Xu, JM Zhang, R Liao, Z Huang - Materials Chemistry and …, 2016 - Elsevier
The effective work functions and formation energies for Ni/HfO 2 interfaces with and without
defects, including interfacial intrinsic atom substitution and atom vacancy in interfacial layer …
defects, including interfacial intrinsic atom substitution and atom vacancy in interfacial layer …
[HTML][HTML] Stability and band offsets between GaAs semiconductor and CeO2 gate dielectric
J Wang, M Xue, H Liu, M Yuan, D Bai, G Tang… - AIP Advances, 2019 - pubs.aip.org
Cerium oxide (CeO 2) appears to be a promising candidate high-k dielectric material in
GaAs-based metal-oxide-semiconductor field-effect transistors. The electronic properties of …
GaAs-based metal-oxide-semiconductor field-effect transistors. The electronic properties of …