GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal
quantum efficiency with increasing injection current. This droop phenomenon is currently the …

Over the past decade, advances in LEDs have enabled the potential for wide-scale
replacement of traditional lighting with solid-state light sources. If LED performance targets …

InGaN-based light-emitting diodes (LEDs) exhibit a significant efficiency loss (droop) when
operating at high injected carrier densities, the origin of which remains an open issue. Using …

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …

This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …

In this paper, we report on the latest advancements in improving AlGaInN-based visible-light-
emitting-diode (LED) efficiency in epitaxy, chip, and package designs. We investigate the …

To investigate the variation in internal quantum efficiency in InGaN structures, we measure
the differential carrier lifetime of an InGaN/GaN double-heterostructure light-emitting diode …