Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

AlGaN‐based deep ultraviolet light‐emitting diodes (UV LEDs) have gained rapidly growing
attention due to their wide applications in water purification, air disinfection, and sensing as …

Abstract A MXene-GaN-MXene based multiple quantum well photodetector was prepared
on patterned sapphire substrate by facile drop casting. The use of MXene electrodes …

The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-
LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature …

Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from
semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were …

This paper proposes the'skin effect'of the machining-induced damage at high strain rates.
The paper first reviews the published research work on machining-induced damage and …

White light emitting diodes (wLEDs) have become, in the last decade, the most efficient
device for most lighting applications. They are mainly composed of indium and gallium for …

Hetero-epitaxial growth of GaN often leads to high density of threading dislocations, which
poses a significant challenge to the promotion of the performance of GaN-based devices. In …

We report a novel laser processing strategy to realize high-aspect-ratio crack-free
microstructures fabrication on sapphire substrates by combining femtosecond laser-induced …

Green GaInN/GaN quantum well light-emitting diode (LED) wafers were grown on
nanopatterned c-plane sapphire substrate by metal-organic vapor phase epitaxy. Without …