This brief presents a review of developments in spin-transfer-torque magnetoresistive
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …

A non-volatile memory designed to FLASH recollections and switch SRAM seems to be the
Magnetic RAM (MRAM) proximity unit. Due to its inherent radiation hardness, Spin Transfer …

Resistive nonvolatile memory (NVM) is considered to be a leading candidate for next-
generation memory. However, maintaining a target sensing margin is a challenge with …

Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-
CMOS technology for embedded and data storage applications seeking non-volatility, near …

A high-speed and low-power preread and write sense amplifier (PWSA) is presented for
magnetoresistive RAM (MRAM). The sense amplifier incorporates a writing circuit for MRAM …

An embedded level-shifting (ELS) dual-rail SRAM is proposed to enhance the availability of
dual-rail SRAMs. Although dual-rail SRAM is a powerful solution for satisfying the increasing …

This paper presents a high reliability sensing circuit for the deep nanometer spin-transfer
torque magnetic random-access memory (STT-MRAM). This sensing circuit, using a triple …

As technology scales down, the sensing margin of spin-transfer-torque random access
memory is significantly degraded because of the increased process variation and decreased …

Although spin orbit torque magnetic random access memory (SOT-MRAM) is one of the
strong candidates for next-generation embedded memories, the degradation of read margin …

As process technology downscales, read reliability has become a critical barrier for spin
transfer torque magnetic random access memory (STT-MRAM), owing to the increasing …