Carbon nanotube field effect transistor (CNTFET) is swiftly becoming an alternative to
conventional CMOS transistors due to superior transport properties, improved current …

The growing demand of Internet of things based portable gadgets motivate to develop low
power static random access memory (SRAM) cell. It occupies large portion in modern …

This paper presents a Schmitt-trigger-based single-ended 11T SRAM cell, which
significantly improves read and write static noise margin (SNM) and consumes low power …

This paper presents a novel single-ended disturb-free 9T subthreshold SRAM cell with cross-
point data-aware Write word-line structure. The disturb-free feature facilitates bit-interleaving …

Low power and noise tolerant static random access memory (SRAM) cells are in high
demand today. This paper presents a stable differential SRAM cell that consumes low …

This book provides a guide to Static Random Access Memory (SRAM) bitcell design and
analysis to meet the nano-regime challenges for CMOS devices and emerging devices …

This paper presents a technique for designing a low-power and variability-aware SRAM cell.
The cell achieves low power dissipation due to its series-connected tail transistor and read …

SRAM suffers read-disturb and write failures at a low supply voltage, especially at deep
subthreshold operation. This study proposes a 9T-SRAM cell with a data-aware-feedback …

Higher noise tolerance, lower power consumption, and higher reliability are the major
design metrics for designing an SRAM cell. It is difficult to achieve an SRAM cell with stable …

In this paper, a novel single ended PPN based 10T static random access memory (SRAM)
with high read stability is presented. The proposed cell is energy efficient with double ended …