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Suspended semiconductor nanostructures: physics and technology
AG Pogosov, AA Shevyrin, DA Pokhabov… - Journal of Physics …, 2022 - iopscience.iop.org
The current state of research on quantum and ballistic electron transport in semiconductor
nanostructures with a two-dimensional electron gas separated from the substrate and …
nanostructures with a two-dimensional electron gas separated from the substrate and …
[SÁCH][B] Scanning-probe electronic imaging of lithographically patterned quantum rings
Quantum rings patterned from two-dimensional semiconductor heterostructures exhibit a
wealth of quantum transport phenomena at low temperature and in a magnetic field that can …
wealth of quantum transport phenomena at low temperature and in a magnetic field that can …
Ballistic transport and exchange interaction in InAs nanowire quantum point contacts
S Heedt, W Prost, J Schubert, D Grutzmacher… - Nano …, 2016 - ACS Publications
One-dimensional ballistic transport is demonstrated for a high-mobility InAs nanowire
device. Unlike conventional quantum point contacts (QPCs) created in a two-dimensional …
device. Unlike conventional quantum point contacts (QPCs) created in a two-dimensional …
Coherent jetting from a gate-defined channel in bilayer graphene
Graphene has evolved as a platform for quantum transport that can compete with the best
and cleanest semiconductor systems. Here, we report on the observation of distinct …
and cleanest semiconductor systems. Here, we report on the observation of distinct …
Emerging scanning probe–based setups for advanced nanoelectronic research
Scanning probe microscopy (SPM) refers to a family of techniques that have become
essential to study many different properties of materials and devices at the nanoscale. All of …
essential to study many different properties of materials and devices at the nanoscale. All of …
Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium
We report experimental evidence of ballistic hole transport in one-dimensional quantum
wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we …
wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we …
Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors
Utilizing an innovative combination of scanning-probe and spectroscopic techniques,
supported by first-principles calculations, we demonstrate how electron-beam exposure of …
supported by first-principles calculations, we demonstrate how electron-beam exposure of …
[HTML][HTML] Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using cryogenic on-chip multiplexing
P Ma, K Delfanazari, RK Puddy, J Li, M Cao, T Yi… - Chip, 2024 - Elsevier
The mass production and the practical number of cryogenic quantum devices producible in
a single chip are limited to the number of electrical contact pads and wiring of the cryostat or …
a single chip are limited to the number of electrical contact pads and wiring of the cryostat or …
Interference features in scanning gate conductance maps of quantum point contacts with disorder
We consider quantum point contact (QPC) defined within a disordered two-dimensional
electron gas as studied by scanning gate microscopy. We evaluate the conductance maps in …
electron gas as studied by scanning gate microscopy. We evaluate the conductance maps in …
Structure of quasiparticles in a local Fermi liquid
I Snyman - Physical Review B, 2023 - APS
Conduction electrons interacting with a dynamic impurity can give rise to a local Fermi liquid.
The latter has the same low-energy spectrum as an ideal Fermi gas containing a static …
The latter has the same low-energy spectrum as an ideal Fermi gas containing a static …