A portable 2-transistor picowatt temperature-compensated voltage reference operating at 0.5 V

M Seok, G Kim, D Blaauw… - IEEE Journal of Solid …, 2012 - ieeexplore.ieee.org
Sensing systems such as biomedical implants, infrastructure monitoring systems, and
military surveillance units are constrained to consume only picowatts to nanowatts in …

A subthreshold voltage reference with scalable output voltage for low-power IoT systems

I Lee, D Sylvester, D Blaauw - IEEE Journal of Solid-State …, 2017 - ieeexplore.ieee.org
This paper presents a subthreshold voltage reference in which the output voltage is scalable
depending on the number of stacked PMOS transistors. A key advantage is that its output …

1.2-V supply, 100-nW, 1.09-V bandgap and 0.7-V supply, 52.5-nW, 0.55-V subbandgap reference circuits for nanowatt CMOS LSIs

Y Osaki, T Hirose, N Kuroki… - IEEE Journal of Solid …, 2013 - ieeexplore.ieee.org
This paper presents bandgap reference (BGR) and sub-BGR circuits for nanowatt LSIs. The
circuits consist of a nano-ampere current reference circuit, a bipolar transistor, and …

A 24.4 ppm/° C voltage mode bandgap reference with a 1.05 V supply

R Nagulapalli, RK Palani… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This brief proposes a sub-1V, voltage mode CMOS bandgap reference circuit.
Conventionally, sub-1V references are obtained by converting PTAT and CTAT voltages to …

A 1.16-V 5.8-to-13.5-ppm/° C curvature-compensated CMOS bandgap reference circuit with a shared offset-cancellation method for internal amplifiers

K Chen, L Petruzzi, R Hulfachor… - IEEE Journal of Solid …, 2020 - ieeexplore.ieee.org
This article introduces an accurate current-mode bandgap reference circuit design with a
novel shared offset compensation scheme for its internal amplifiers. This bandgap circuit has …

A novel 1.2–V 4.5-ppm/° C curvature-compensated CMOS bandgap reference

B Ma, F Yu - IEEE Transactions on circuits and systems I …, 2014 - ieeexplore.ieee.org
This paper proposes a novel CMOS bandgap reference (BGR) with high-order curvature-
compensation by using MOS transistors operating in weak inversion region. The mechanism …

A 1.2-V 4.2- High-Order Curvature-Compensated CMOS Bandgap Reference

Q Duan, J Roh - IEEE Transactions on Circuits and Systems I …, 2014 - ieeexplore.ieee.org
This study presents a high-precision CMOS bandgap reference (BGR) circuit with low supply
voltage. The proposed BGR circuit consists of two BGR cores and a curvature correction …

A sub-1 ppm/° C precision bandgap reference with adjusted-temperature-curvature compensation

HM Chen, CC Lee, SH Jheng… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper presents a precision bandgap reference with an innovative adjusted-temperature-
curvature compensation circuit that obtains a good temperature coefficient (TC) over a wide …

5.4 A 32nW bandgap reference voltage operational from 0.5 V supply for ultra-low power systems

A Shrivastava, K Craig, NE Roberts… - … Solid-State Circuits …, 2015 - ieeexplore.ieee.org
Most systems require a voltage reference independent of variation of power supply, process,
or temperature, and a bandgap voltage reference (BGR) often serves this purpose. For ultra …

A Noise, 3 ppm/°C TC Bandgap Reference With Offset/Noise Suppression and Five-Piece Linear Compensation

L Liu, X Liao, J Mu - IEEE Transactions on Circuits and Systems …, 2019 - ieeexplore.ieee.org
This paper proposes a low-temperature coefficient (TC), noise, and offset bandgap
reference (BGR) for the high precision applications. In order to reduce the offset voltage and …